Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ali A. Elabd"'
Publikováno v:
Alexandria Engineering Journal, Vol 56, Iss 3, Pp 309-312 (2017)
Studying of single electronics should consider both the temperature and the circuit capacitance as being the most important parameters that affect the behavior of SET devices. In this letter, the delay and the output voltage level in the single elect
Externí odkaz:
https://doaj.org/article/4f38e2f52b394c97805d39b5bc46f202
Publikováno v:
Journal of Computational Electronics. 14:604-610
The simulation of single-electron circuits is mainly based on using the Monte Carlo method which is more suitable to simulate quantum systems. The long simulation time is the main disadvantage of the Monte Carlo algorithms. This paper discusses in de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5938253fc3bec0b5bdcdc1c664ba49
https://doi.org/10.1007/s10825-015-0694-0
https://doi.org/10.1007/s10825-015-0694-0
Publikováno v:
Menoufia Journal of Electronic Engineering Research. 24:107-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b906457037c51893c72c2a2187634c9e
https://doi.org/10.21608/mjeer.2015.64135
https://doi.org/10.21608/mjeer.2015.64135
Publikováno v:
2015 32nd National Radio Science Conference (NRSC).
In this paper, we discuss the effect of simultaneous tunneling events on single electron circuits. Single electron circuits are classified into two types: the first is a small single electron circuit with one island, and the second type is a large ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05a0788e3d22078d9635f14c3b3e8f40
https://doi.org/10.1109/nrsc.2015.7117854
https://doi.org/10.1109/nrsc.2015.7117854
Publikováno v:
International Journal of Nano Devices, Sensors and Systems (IJ-Nano). 1
In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99766bedcbf746882adc7ce65f7e10d
https://doi.org/10.11591/ij-nano.v1i2.1518
https://doi.org/10.11591/ij-nano.v1i2.1518
Publikováno v:
2012 29th National Radio Science Conference (NRSC).
In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ce3f2da4afb7e7fe7977418810cf5f
https://doi.org/10.1109/nrsc.2012.6208569
https://doi.org/10.1109/nrsc.2012.6208569