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pro vyhledávání: '"Ali, Tarek Nadi Ismail"'
Autor:
Okuno, J., Kunihiro, T., Konishi, K., Shuto, Y., Sugaya, F., Materano, M., Ali, Tarek Nadi Ismail, Lederer, Maximilian, Kuehnel, Kati, Seidel, Konrad, Mikolajick, T., Schroeder, U., Tsukamoto, M., Umebayashi, T.
We have reported that film thickness scaling of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) allows hafnium-based one- transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) to obtain higher cycling tolerance for hard breakdown with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::2d0d935ec1c905e933252357b9029f37
https://publica.fraunhofer.de/handle/publica/434478
https://publica.fraunhofer.de/handle/publica/434478
Autor:
Ali, Tarek Nadi Ismail, Revello Olivo, Ricardo Orlando, Kerdiles, S., Lehninger, David, Lederer, Maximilian, De, Sourav, Royet, A.-S., Sünbül, Ayse, Prabhu, Aditya, Kühnel, Kati, Czernohorsky, Malte, Rudolph, Matthias, Hoffmann, Raik
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91b92274fcfa1d81d302c171fb00cb6