Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ali, Baratov"'
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 797-807 (2022)
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/G
Externí odkaz:
https://doaj.org/article/1f5d9dc0ce6a4a54a88802bd65a88721
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://doaj.org/article/802bb96512794ca8844a04843f7916f6
Autor:
Biplab Sarkar, Shunpei Yamashita, Aakash Jadhav, Takashi Ozawa, Akio Wakejima, Yoshio Honda, Sourajeet Roy, Joel T. Asubar, Masaaki Kuzuhara, Manato Deki, Ali Baratov, Hiroshi Amano, Shugo Nitta
Publikováno v:
IEEE Transactions on Electron Devices. 68:6059-6064
Conventional lumped small signal circuit (SSC) models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are derived from the low frequency portion of the experimentally measured Y-parameters. Consequently, these mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14bc07b6a0bac54b32a6dc931938cbff
https://doi.org/10.1109/ted.2021.3119528
https://doi.org/10.1109/ted.2021.3119528
Autor:
Hiroshi Amano, Joel T. Asubar, Masaaki Kuzuhara, Biplab Sarkar, Akio Wakejima, Ali Baratov, Aakash Jadhav, Sourajeet Roy, Yoshio Honda, Takashi Ozawa, Manato Deki, Shunpei Yamashita
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::133ac0f1a175ff46d868408d4a3d50a8
https://ieeexplore.ieee.org/document/9434402/
https://ieeexplore.ieee.org/document/9434402/
Autor:
Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3378e9ae22664d34ec48e8e835e60d37
https://doi.org/10.1109/imfedk53601.2021.9637625
https://doi.org/10.1109/imfedk53601.2021.9637625
Autor:
Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys, Tetsu Kachi, Boguslawa Adamowicz, Akio Wakejima, Masaaki Kuzuhara, Akio Yamamoto, Joel T. Asubar
Publikováno v:
Applied Physics Express. 15:104002
We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al2O3/AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f5a76d3f9560b4dc9a2993a5a8b937b
https://doi.org/10.35848/1882-0786/ac8f13
https://doi.org/10.35848/1882-0786/ac8f13
Autor:
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Rui, Shan Low, Joel T., Asubar, Ali, Baratov, Shunsuke, Kamiya, Itsuki, Nagase, Shun, Urano, Shinsaku, Kawabata, Hirokuni, Tokuda, Masaaki, Kuzuhara, Yusui, Nakamura, Kenta, Naito, Tomohiro, Motoyama, Zenji, Yatabe
Publikováno v:
Applied Physics Express = Applied Physics Express. 14(3):031004
We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61df7cdc155354941faf8b74b4fce502
http://hdl.handle.net/2298/00044023
http://hdl.handle.net/2298/00044023