Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Algirdas Sužiedelis"'
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Algirdas Sužiedėlis
Publikováno v:
Crystals, Vol 14, Iss 8, p 720 (2024)
Planar microwave bow-tie diodes on bases of selectively doped semiconductor structures are successfully used in the detection and imaging of electromagnetic radiation in millimeter and submillimeter wavelength ranges. Although the signal formation me
Externí odkaz:
https://doaj.org/article/e2f208412ffc404185e167ba2f9031ef
Autor:
Steponas Ašmontas, Oleksandr Masalskyi, Ihor Zharchenko, Algirdas Sužiedėlis, Jonas Gradauskas
Publikováno v:
Inorganics, Vol 12, Iss 6, p 174 (2024)
The photocurrent across crystalline GaAs p-n junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excita
Externí odkaz:
https://doaj.org/article/c218035b0e8b4ba0bfe05bb7f49080e9
Autor:
Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Karolis Požela, Maksimas Anbinderis
Publikováno v:
Sensors, Vol 23, Iss 3, p 1441 (2023)
The application of the unique properties of terahertz radiation is increasingly needed in sensors, especially in those operating at room temperature without an external bias voltage. Bow-tie microwave diodes on the base of InGaAs semiconductor struct
Externí odkaz:
https://doaj.org/article/f2abd207e1fa4713a48e023d7bdcd5ce
Autor:
Maksimas Anbinderis, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, Algirdas Sužiedėlis
Publikováno v:
Sensors, Vol 21, Iss 13, p 4487 (2021)
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-in
Externí odkaz:
https://doaj.org/article/a769fd168cdd448196a446a2496016ee
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vladimir Umansky
Publikováno v:
Sensors, Vol 20, Iss 3, p 829 (2020)
We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above differe
Externí odkaz:
https://doaj.org/article/250a8e097a564424af52c65a3de54473
Autor:
Jonas GRADAUSKAS, Steponas AŠMONTAS, Edmundas ŠIRMULIS, Algirdas SUŽIEDĖLIS, Aurimas ČERŠKUS, Benas KUNDROTAS, Roma RINKEVIČIENĖ, Zinovy DASHEVSKY, Vladimir KASIYAN
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 123-125 (2014)
We report on the investigation of photoresponse signal arising across metal-PbTe structures exposed to CO2 laser radiation. Three different metals, Al, Au, and Bi, have been used for Schottky diode-like structure fabrication. The experimental investi
Externí odkaz:
https://doaj.org/article/a8c06c4ad46c438d93563ed6afbd202b
Autor:
Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Viktorija NARGELIENĖ, Aurimas ČERŠKUS, Andžej LUČUN, Tomas ANBINDERIS, Irina PAPSUJEVA, Aleksandras NARKŪNAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 138-140 (2014)
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunctio
Externí odkaz:
https://doaj.org/article/f8499880ebce4b28aba14f029eba25a9
Autor:
Neringa Samuoliene, Jonas Gradauskas, Algirdas Sužiedelis, Marius Treideris, Viktoras Vaičikauskas
Publikováno v:
Medžiagotyra, Vol 21, Iss 2, Pp 179-181 (2015)
A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the v
Externí odkaz:
https://doaj.org/article/8db3efb445f847dd903ead57b8389b50
Autor:
Aldis Šilénas, O. Žalys, Jonas Gradauskas, Viktoras Vaičikauskas, Edmundas Širmulis, Steponas Ašmontas, Vitas Svedas, Vytautas Vaičiūnas, Vitaliy Kostylyov, Algirdas Sužiedelis
Publikováno v:
Materials Science-Poland, Vol 36, Iss 2, Pp 337-340 (2018)
Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage Uphdue to intense electronhole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b025b280125456bd758604762a1774
https://doi.org/10.1515/msp-2017-0106
https://doi.org/10.1515/msp-2017-0106
Autor:
Jonas Gradauskas, Kristina Šliužienė, Andrius Maneikis, Roman Sobolewski, Algirdas Sužiedelis, A. Jukna
Publikováno v:
Micro & Nano Letters. 12:838-842
Thin films of YBa2Cu3O7–x (YBCO) oxygen-deficient superconductor were used to manufacture asymmetric microdiodes and investigate their asymmetric non-linear current–voltage (I–V) dependences at temperatures T > T c, where T c is the temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33cb7f6101d512644e3291650b8d582
https://doi.org/10.1049/mnl.2017.0268
https://doi.org/10.1049/mnl.2017.0268