Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Algirdas Sužiedelis"'
Autor:
Neringa Samuoliene, Jonas Gradauskas, Algirdas Sužiedelis, Marius Treideris, Viktoras Vaičikauskas
Publikováno v:
Medžiagotyra, Vol 21, Iss 2, Pp 179-181 (2015)
A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the v
Externí odkaz:
https://doaj.org/article/8db3efb445f847dd903ead57b8389b50
Autor:
Aldis Šilénas, O. Žalys, Jonas Gradauskas, Viktoras Vaičikauskas, Edmundas Širmulis, Steponas Ašmontas, Vitas Svedas, Vytautas Vaičiūnas, Vitaliy Kostylyov, Algirdas Sužiedelis
Publikováno v:
Materials Science-Poland, Vol 36, Iss 2, Pp 337-340 (2018)
Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage Uphdue to intense electronhole
Autor:
Jonas Gradauskas, Kristina Šliužienė, Andrius Maneikis, Roman Sobolewski, Algirdas Sužiedelis, A. Jukna
Publikováno v:
Micro & Nano Letters. 12:838-842
Thin films of YBa2Cu3O7–x (YBCO) oxygen-deficient superconductor were used to manufacture asymmetric microdiodes and investigate their asymmetric non-linear current–voltage (I–V) dependences at temperatures T > T c, where T c is the temperature
Autor:
Viktoras Vaičikauskas, Algirdas Sužiedelis, Neringa Samuoliene, Marius Treideris, Jonas Gradauskas
Publikováno v:
Medžiagotyra, Vol 21, Iss 2, Pp 179-181 (2015)
A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the v
Autor:
Jonas Gradauskas, E. Šatkovskis, V. Zagadsky, Algirdas Sužiedelis, Steponas Ašmontas, J. Stupakova
Publikováno v:
Technical Physics Letters. 32:603-605
Two types of structures comprising porous silicon (por-Si) layers between metal electrodes were prepared, which possessed nonlinear (A type) and linear (B type) current-voltage characteristics. The exposure to microwave radiation leads to the appeara
Autor:
Steponas Ašmontas, Algirdas Sužiedelis
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8558873e87a86ca2054956cf72c5e614
http://www.scopus.com/inward/record.url?eid=2-s2.0-0027797362&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0027797362&partnerID=MN8TOARS
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Autor:
Regita Bendikienė, Kazimieras Juzėnas
26th International Baltic Conference on Materials EngineeringSelected, peer reviewed papers from the 26th International Baltic Conference on Materials Engineering 2017, October 26-27, Kaunas, Lithuania