Zobrazeno 1 - 10
of 137
pro vyhledávání: '"Alfred R. Adams"'
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea3580acf99fc065faa6cb13c0a53ee
https://doi.org/10.23919/islc52947.2022.9943464
https://doi.org/10.23919/islc52947.2022.9943464
Autor:
Markus-Christian Amann, Stephen J. Sweeney, Alfred R. Adams, Shamsul Arafin, Timothy D. Eales, Barnabas A. Ikyo, Igor P. Marko, Stephan Sprengel
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 23:1-9
The efficiency limiting mechanisms in type-I GaInAsSb-based quantum well (QW) lasers, emitting at 2.3 μm, 2.6 μm and 2.9 μm, are investigated. Temperature characterization techniques and measurements under hydrostatic pressure identify an Auger pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2776d8844a6cd969fe8f90eefaf97fcf
https://doi.org/10.1109/jstqe.2017.2687823
https://doi.org/10.1109/jstqe.2017.2687823
Autor:
Igor P. Marko, Stephen J. Sweeney, Igor Vurgaftman, Jerry R. Meyer, Timothy D. Eales, Alfred R. Adams
Publikováno v:
Journal of Physics D: Applied Physics. 54:055105
From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Au
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb638018b2b08c95e421a2b52481fe8
https://doi.org/10.1088/1361-6463/abc042
https://doi.org/10.1088/1361-6463/abc042
Publikováno v:
Journal of Applied Physics. 125:082538
In this paper, we discuss how the deliberate and controlled introduction of strain can be used to improve the performance of semiconductor lasers. We show how strain-induced modifications of the electronic band structure give rise to significant chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6a31043c7ec11c6d8184db20aa4792
https://doi.org/10.1063/1.5063710
https://doi.org/10.1063/1.5063710
By measuring the photoconductive edge and the magnetophonon effect in InP and GaAs as their band gap is increased by the application of hydrostatic pressure, it has been possible to obtain a direct experimental relationship between the electron effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d99caadfe42b59c057bd8cb8bdab0a9d
https://doi.org/10.1088/0022-3719/17/25/007
https://doi.org/10.1088/0022-3719/17/25/007
Autor:
Alfred R. Adams
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1364-1373
This tutorial article explains the two important reasons for the introduction of strain into the active region of a quantum-well laser. First, it reduces the density of states at the top of the valence band, which allows population inversion to be ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692599e05d1ee0b0e1fbd4f50b9805f3
https://doi.org/10.1109/jstqe.2011.2108995
https://doi.org/10.1109/jstqe.2011.2108995
Autor:
A. Bachmann, A. B. Ikyo, K. Kashani-Shirazi, Markus-Christian Amann, Alfred R. Adams, Igor P. Marko, Stephen J. Sweeney
Publikováno v:
IET Optoelectronics. 3:305-309
High-pressure techniques are used to investigate and optimise the design of GaInAsSb/AlGaAsSb vertical cavity surface emitting lasers (VCSELs) emitting at 2.4 µm. From measurements on edge emitting lasers it is found that non-radiative Auger recombi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cd61b2c1ba026a1129230a7048fd539
https://doi.org/10.1049/iet-opt.2009.0045
https://doi.org/10.1049/iet-opt.2009.0045
Autor:
Stephen J. Sweeney, Wolfgang Stolz, Vladimir Odnoblyudov, James Chamings, Bernardette Kunert, Charles W. Tu, Sucheta Ahmed, Alfred R. Adams
Publikováno v:
physica status solidi (b). 246:527-531
We use high pressure techniques to investigate the properties of two classes of "dilute-nitride-phosphide"-based devices; GaNP/GaP light emitting diodes for yellow-amber-red display applications and GaNAsP/GaP lasers, a potential route to producing l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf49a02284cc4f6e36a71978de1babf4
https://doi.org/10.1002/pssb.200880537
https://doi.org/10.1002/pssb.200880537
Publikováno v:
Journal of Materials Science: Materials in Electronics. 20:272-276
Twenty five years ago Arakawa suggested that by confining carriers in three dimensions (in quantum dots) a temperature insensitive threshold current (Ith) could be achieved in semiconductor lasers. In this paper we discuss investigations on state-of-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009a0dde8455a392af5516e604f6c72b
https://doi.org/10.1007/s10854-008-9574-8
https://doi.org/10.1007/s10854-008-9574-8
Autor:
Stephen J. Sweeney, Alfred Forchel, Alfred R. Adams, Igor P. Marko, M. S. Skolnick, Nobuaki Hatori, Kristian M. Groom, Johann Peter Reithmaier, D. J. Mowbray, R. Krebs, Huiyun Liu, Mitsuru Sugawara, N. F. Massé
Publikováno v:
physica status solidi (b). 244:82-86
We present the results based upon a systematic study of the properties of quantum dot (QD) lasers with emission wavelengths around 0.98 and 1.3 μm at room temperature and atmospheric pressure. To investigate the radiative and non-radiative component
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e9d43df2bfabd8771b0abca79d9258
https://doi.org/10.1002/pssb.200672544
https://doi.org/10.1002/pssb.200672544