Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Alfonso G. Taboada"'
Autor:
Fabio Isa, Anna Marzegalli, Alfonso G. Taboada, Claudiu V. Falub, Giovanni Isella, Francesco Montalenti, Hans von Känel, Leo Miglio
Publikováno v:
APL Materials, Vol 1, Iss 5, Pp 052109-052109-8 (2013)
We show that the Ge concentration in Si1−xGex alloys grown under strong out-of-equilibrium conditions determines the character of the population of threading dislocations (TDs). Above a critical value x ∼ 0.25 vertical TDs dominate over the commo
Externí odkaz:
https://doaj.org/article/384917f1adfe41efbd94b7a11e5d1427
Autor:
Alfonso G. Taboada, P. Zambon, Spyridon Gkoumas, Arne Jensen, Thomas Thuering, Michael Rissi, Ch. Broennimann
Publikováno v:
Medical Imaging 2019: Physics of Medical Imaging.
State-of-the-art X-ray breast imaging (BI) modalities such as digital breast tomosynthesis (DBT), contrast enhanced spectral mammography (CESM) and breast CT (BCT) impose demanding requirements on digital X-ray detectors. This work studies the imagin
Autor:
Stefano Sanguinetti, Leo Miglio, C. Mannucci, Sergio Bietti, Alexey Fedorov, Massimo Gurioli, Francesco Biccari, Anna Vinattieri, Alfonso G. Taboada, Andrea Ballabio, H. von Känel, Giovanni Isella, Luca Esposito
Publikováno v:
Nanoscience and nanotechnology letters
9 (2017): 1108–1113. doi:10.1166/nnl.2017.2440
info:cnr-pdr/source/autori:Biccari, F.; Esposito, L.; Mannucci, C.; Taboada, G.; Bietti, S.; Ballabio, A.; Fedorov, A.; Isella, G.; von Kanel, H.; Miglio, L.; Sanguinetti, S.; Vinattieri, A.; Gurioli, M./titolo:Site-Controlled Natural GaAs(111) Quantum Dots Fabricated on Vertical GaAs%2FGe Microcrystals on Deeply Patterned Si(001) Substrates/doi:10.1166%2Fnnl.2017.2440/rivista:Nanoscience and nanotechnology letters (Print)/anno:2017/pagina_da:1108/pagina_a:1113/intervallo_pagine:1108–1113/volume:9
9 (2017): 1108–1113. doi:10.1166/nnl.2017.2440
info:cnr-pdr/source/autori:Biccari, F.; Esposito, L.; Mannucci, C.; Taboada, G.; Bietti, S.; Ballabio, A.; Fedorov, A.; Isella, G.; von Kanel, H.; Miglio, L.; Sanguinetti, S.; Vinattieri, A.; Gurioli, M./titolo:Site-Controlled Natural GaAs(111) Quantum Dots Fabricated on Vertical GaAs%2FGe Microcrystals on Deeply Patterned Si(001) Substrates/doi:10.1166%2Fnnl.2017.2440/rivista:Nanoscience and nanotechnology letters (Print)/anno:2017/pagina_da:1108/pagina_a:1113/intervallo_pagine:1108–1113/volume:9
Semiconductor quantum dots (QDs), made of III-V semiconductors alloys, have attracted increasing interest in the last two decades, especially for their possible usage in quantum information technology. However, for such advanced applications, the req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84b817715e3e7ffae561af0cbb0dfa69
http://hdl.handle.net/11311/1063358
http://hdl.handle.net/11311/1063358
Autor:
Fabio Isa, Philippe Niedermann, Daniel Chrastina, Mojmír Meduňa, Giovanni Isella, Claudiu V. Falub, Alfonso G. Taboada, Thomas Kreiliger, Hans von Känel
Publikováno v:
Quantum Matter. 3:290-296
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for solving the problems associated with lattice parameter and thermal expansion coefficient mismatch, i.e., dislocations, wafer bowing and cracks. For car
Autor:
Daniel Chrastina, Hans von Känel, Antonia Neels, Fabio Isa, Philippe Niedermann, Thomas Kreiliger, Alex Dommann, Elisabeth Müller, Fabio Pezzoli, Giovanni Isella, Alfonso G. Taboada, Mojmír Meduňa, Anna Marzegalli, Claudiu V. Falub, Roberto Bergamaschini, Leo Miglio
Publikováno v:
Thin Solid Films
We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defe
Autor:
Thomas Kreiliger, Hans von Känel, Fabio Isa, Philippe Niedermann, Alex Dommann, Giovanni Isella, Claudiu V. Falub, Rolf Kaufmann, A. Pezous, Schahrazède Mouaziz, Alfonso G. Taboada, Stefano Cecchi
Publikováno v:
physica status solidi (a). 211:131-135
Monolithic integration of absorber layer and readout electronics is expected to greatly improve spatial resolution and sensitivity of X-ray imaging detectors. It requires, however, heteroepitaxial growth of thick, lattice, and thermally mismatched ab
Autor:
Emanuele Uccelli, Thomas Kreiliger, H. von Känel, Giovanni Isella, Antonia Neels, Elisabeth Müller, Philippe Niedermann, Jean Fompeyrine, Alex Dommann, M. Richter, Fabio Isa, Claudiu V. Falub, Alfonso G. Taboada
Publikováno v:
MRS Proceedings. 1538:283-289
We report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm
Autor:
Thomas Kreiliger, Elisabeth Müller, Leo Miglio, E. Barthazy Meier, H. von Känel, Giovanni Isella, Fabio Isa, Mojmír Meduňa, Marco Salvalaglio, Claudiu V. Falub, Alfonso G. Taboada
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eadcff47611c96aa66680e96b2ad3743
http://hdl.handle.net/11311/1004394
http://hdl.handle.net/11311/1004394
Autor:
van Hcm Eric Genuchten, J.H. Blokland, PM Paul Koenraad, J. T. Devreese, Daniel Granados, Jan C. Maan, M Murat Bozkurt, Vladimir M. Fomin, V. N. Gladilin, Najm Niek Kleemans, Pcm Christianen, Alfonso G. Taboada, Jorge M. Garcia
Publikováno v:
Physical Review B, 80(15):155318, 155318-1/4. American Physical Society
Physical Review. B, Condensed Matter and Materials Physics, 80, 1-4
Physical Review. B, Condensed Matter and Materials Physics, 80, 15, pp. 1-4
Physical review : B : solid state
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review. B, Condensed Matter and Materials Physics, 80, 1-4
Physical Review. B, Condensed Matter and Materials Physics, 80, 15, pp. 1-4
Physical review : B : solid state
Digital.CSIC. Repositorio Institucional del CSIC
instname
We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these ty
Autor:
J. M. Llorens, Pablo Aitor Postigo, Josep Canet-Ferrer, Alfonso G. Taboada, Ivan Prieto, L. E. Muñoz-Camúñez, C. Robles, Guillermo Muñoz-Matutano, Juan P. Martínez-Pastor, José María Ripalda
Publikováno v:
SPIE Proceedings.
In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ul