Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Alfio Russo"'
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90
Autor:
Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte
Publikováno v:
Materials, Vol 17, Iss 8, p 1908 (2024)
This paper presents a reliability study of a conventional 650 V SiC planar MOSFET subjected to pulsed HTRB (High-Temperature Reverse Bias) stress and negative HTGB (High-Temperature Gate Bias) stress defined by a TCAD static simulation showing the el
Externí odkaz:
https://doaj.org/article/689358dc5f40414ba0691c6ef6cb63cb
Autor:
Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1626 (2021)
In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length ove
Externí odkaz:
https://doaj.org/article/8de91cf8224c48cf9041b0afcab35dc0
Autor:
Nicolò Piluso, Salvo Coffa, Elisa Vitanza, Alfio Russo, B. Carbone, Andrea Severino, Ruggero Anzalone
Publikováno v:
Materials Science Forum. 1004:472-476
In this study, the correlation between the Emission Microscopy (Em.Mi.) related to the failure site of the 4H-SiC 650V MOSFET devices after reliability test and epitaxial dislocation defects is presented. Devices failed at the High-Temperature Revers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276d673cba9339aa475357aa4eb6a89a
https://doi.org/10.4028/www.scientific.net/msf.1004.472
https://doi.org/10.4028/www.scientific.net/msf.1004.472
Autor:
Edoardo Zanetti, Clarice Di Martino, Fabrizio Roccaforte, Mario S. Alessandrino, Mario Saggio, Alfio Russo, Carlo Venuto, Patrick Fiorenza, B. Carbone, Corrado Bongiorno, Filippo Giannazzo
Publikováno v:
Materials Science Forum
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d87415afeb767d7a3a15d20a36b714
https://doi.org/10.4028/www.scientific.net/msf.1004.433
https://doi.org/10.4028/www.scientific.net/msf.1004.433
Autor:
Alfio Russo, Patrick Fiorenza, Mario S. Alessandrino, Filippo Giannazzo, Fabrizio Roccaforte, B. Carbone
Publikováno v:
Nanomaterials, Vol 11, Iss 1626, p 1626 (2021)
Nanomaterials
Volume 11
Issue 6
Nanomaterials
Volume 11
Issue 6
In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a62314d023fdaa2a222509438cc78502
https://www.mdpi.com/2079-4991/11/6/1626
https://www.mdpi.com/2079-4991/11/6/1626
Autor:
Alfio Russo, C. Venuto, Edoardo Zanetti, E. Vitanza, Patrick Fiorenza, C. Bottari, C. Di Martino, Mario S. Alessandrino, S. Adamo, Fabrizio Roccaforte, B. Carbone, Mario Saggio, Filippo Giannazzo
Publikováno v:
IRPS
In this work, the breakdown of 4H-SiC MOSFETs was correlated with the presence of different crystalline defects in the 4H-SiC epitaxial layer. First, in a wafer level characterization, the devices not working at t = 0 s showed the presence of down-fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::135ef24e5f6b2850ca39d86dee6822a7
https://doi.org/10.1109/irps46558.2021.9405148
https://doi.org/10.1109/irps46558.2021.9405148
Autor:
Stefania Privitera, Grazia Litrico, M. A. Di Stefano, Simona Lorenti, Alfio Russo, F. La Via, Salvo Coffa, Nicolò Piluso, Enzo Fontana
Publikováno v:
MRS Advances. 1:3673-3678
In this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d44c3c7e70d935620635c04467482ef
https://doi.org/10.1557/adv.2016.366
https://doi.org/10.1557/adv.2016.366
Autor:
Salvatore Coffa, Francesco La Via, Alfio Russo, Simona Lorenti, Nicolò Piluso, Enzo Fontana, Cinzia M. Marcellino
Publikováno v:
Materials Science Forum. 858:418-421
In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70ab42a99e9ad0ad073feed7566e1f8e
https://doi.org/10.4028/www.scientific.net/msf.858.418
https://doi.org/10.4028/www.scientific.net/msf.858.418
Autor:
Fabrizio Roccaforte, Paolo Badalà, B. Carbone, Roberto Modica, Corrado Bongiorno, Antonella Sciuto, Salvatore Marchese, Salvatore Coffa, Denise Calì, Alfio Russo, Massimo Mazzillo, Francesco Patane
Publikováno v:
Materials Science Forum. 858:1015-1018
Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed6bbb8c13e2b2b6e5f146545ff6331
https://doi.org/10.4028/www.scientific.net/msf.858.1015
https://doi.org/10.4028/www.scientific.net/msf.858.1015