Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Alexis Schmitt"'
Publikováno v:
Pastoral Psychology. 55:27-33
The Santa Clara Strength of Religious Faith Questionnaire (SCSORF) was administered to 124 undergraduate college students attending a private Catholic university and the result was compared to measures of spirituality, religious behavior, religious c
Publikováno v:
Fifth International Conference on Solid State Lighting.
Laser Diode Arrays continue to gain momentum as versatile, cost-effective, reliable solution for a wide variety of existing and emerging illumination and pumping applications. In order to meet these growing demands, designers find themselves faced wi
Autor:
Alexis Schmitt, Ulrich Steegmueller, Gerhard Herrmann, Josip Maric, Marc Philippens, Martin Behringer, Soenke Tautz, Klaus Friepes, Wolfgang Pammer, Harald Koenig, Johann Luft
Publikováno v:
SPIE Proceedings.
High power diode lasers convince by their very efficient conversion of electrical into optical energy. Besides high efficiencies and record absolute power levels, reliability in all possible operation modes and cost become increasingly important. We
Autor:
W. Teich, G. Seibold, Johann Luft, Martin Rudolf Behringer, Alexis Schmitt, Marc Philippens, Marcel Marchiano, Gerhard Herrmann
Publikováno v:
2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666).
In this paper, the current status of high-power diode laser bars for pump and direct applications are proposed. The Nd:YAG with absorption lines at 808 nm and the Yb:YAG with absorption lines at 940 nm are actually most important for high power diode
Autor:
Alexis Schmitt, Gerhard Herrmann, Martin Behringer, Johann Luft, Jens Biesenbach, Wolfgang Teich, Gabriele Seibold, Joerg Heerlein, Marc Philippens, Thomas Brand, Marcel Marchiano, Stefan Morgott
Publikováno v:
SPIE Proceedings.
The introduction of high power diode laser systems in industry has boosted the interest in these devices for a wide range of applications. Besides printing and soldering, cutting and deep penetration welding are becoming more important. An overview a
High-brightness highly-reliable InGaAlAs/GaAs laser bars with reduced fill factor and 60% efficiency
Autor:
Johann Luft, Alexis Schmitt, Martin Behringer, Gerhard Herrmann, Joerg Heerlein, Marc Philippens
Publikováno v:
SPIE Proceedings.
We have investigated high-power diode laser bars from 808 nm to 980 nm. The presentation is focussed upon the development of suitable laser bars for improved beam quality at increased output power. For better beam shaping structures with reduced fill
Autor:
Juergen Braunstein, S. Bonnefont, Alexis Schmitt, Michael Mikulla, Guenter Weimann, Francoise Lozes, Stefan Morgott, Stephane Mariojouls
Publikováno v:
SPIE Proceedings.
A comprehensive model has been developed to study the operating characteristics of high-power high-brightness lasers consisting of a ridge-waveguide section coupled to a tapered region. The model, based on the Beam Propagation Method (BPM), includes
Autor:
R. E. Sah, Rudolf Kiefer, R. Moritz, Alexis Schmitt, Martin Walther, Sabine Mueller, Guenter Weimann, Juergen Braunstein, Michael Mikulla
Publikováno v:
SPIE Proceedings.
Within the last few years, high power laser diodes with remarkable improvements concerning output power, efficiency, and reliability have been investigated in the wavelength range between 780 nm and 1064 nm. The discussion, whether laser diodes fabri
Publikováno v:
Novel Lasers and Devices-Basic Aspects.
High-brightness and high-efficiency laser bars have been fabricated in the AlGaAs/InGaAs material system. The electro-optical conversion efficiency is close to 60 % at 60 W optical power for bars with broad area lasers. Laser bars comprising 25 taper
Autor:
Alexis Schmitt, Martin Walther, Wilfried Pletschen, Rudolf Kiefer, Michael Mikulla, Pierre Dr Ing Chazan, Guenter Weimann, Juergen Braunstein, A. Wetzel
Publikováno v:
SPIE Proceedings.
In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects that limit the device performance. Due to the interaction between the optical power and the carrier density in the active region of broad area devices