Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Alexia Drevin-Bazin"'
Autor:
Alexia Drevin-Bazin, Antoine Renault, Simon Malandain, Alexandre Seigneurin, Franck Dosseul, Laurent Guilbaud, Donatien Martineau
Publikováno v:
2016 6th Electronic System-Integration Technology Conference (ESTC).
This work aims to develop and compare new encapsulant materials compatible with SiC components in order to propose demonstrators compatible with high temperature (junction temperature of 300°C, ambient temperature of 200°C) and large delta T (−65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82e710e11b6a6df55e12e9f05eff7f59
https://doi.org/10.1109/estc.2016.7764470
https://doi.org/10.1109/estc.2016.7764470
Publikováno v:
Materials Science Forum. :845-848
In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2821f11dd67a3be413c064d7d4202349
https://doi.org/10.4028/www.scientific.net/msf.717-720.845
https://doi.org/10.4028/www.scientific.net/msf.717-720.845
Publikováno v:
Materials Science Forum. 711:184-187
Metal/semiconductor contacts have a great impact on device performances. Contact properties to wide band gap semiconductors, in particular, are more difficult to control due to the large potential barrier which arises when the metal is deposited on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49b54b3f6e24c7a0bd4f0c06d40bb4f
https://doi.org/10.4028/www.scientific.net/msf.711.184
https://doi.org/10.4028/www.scientific.net/msf.711.184