Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Alexey Vert"'
Autor:
Nikita Popov, Alexey Suchkov, Mikhail Zharkov, Veronika Kirillova, Alexander Bazhenov, Ivan Fedotov, Irina Bajenova, Alexandra Khvan, Ilya Kozlov, Alexey Vertkov, Oleg Sevryukov
Publikováno v:
Nuclear Energy and Technology, Vol 10, Iss 3, Pp 189-198 (2024)
Development of new plasma facing components (PFC) draw attention of numerous scientific groups in fusion energy field. Tungsten as a main PFC material main have poor machinability, thus various designs were proposed to overcome this problem. However,
Externí odkaz:
https://doaj.org/article/f2a6ea6b599b40a28221705d5b119ace
Publikováno v:
NATW
The power limits due to thermal runaway of a germanium PIN photodiode as the O-band $(\lambda\sim\mathbf{1300\ nm})$ photodetector component of a silicon photonics technology were characterized under elevated stress conditions. A simplified model is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b6dbe4abbdca5c7229679e928428e2
https://doi.org/10.1109/natw49237.2020.9153080
https://doi.org/10.1109/natw49237.2020.9153080
Autor:
Man Hoi Wong, Pui Yee Hung, G. Bersuker, Mohammad-Ali Miri, Farbod Shafiei, Alexey Vert, Andrea Alù, Michael C. Downer, Tommaso Orzali
Publikováno v:
Advanced Optical Materials. 9:2002252
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f3abe1f067b161946887fef290c29a3
https://doi.org/10.1002/adom.202002252
https://doi.org/10.1002/adom.202002252
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P478-P482
Integration of III-V high mobility channel materials in complementary metal oxide semiconductors (CMOS) and III-V photonic materials for integrated light sources on Si substrates requires low defect density III-V buffer layers in order to enable epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::022dc3100225bf431cccf2af6568468e
https://doi.org/10.1149/2.0101609jss
https://doi.org/10.1149/2.0101609jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P112-P116
This work studies the effect of wet chemical treatment of III-V based epitaxial layers. III-As high mobility channel materials are considered to be promising candidates and being evaluated for replacing Si NMOS channel in future CMOS devices to susta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4cbc1da2d2e8e00a4946cbed42f33a
https://doi.org/10.1149/2.0301602jss
https://doi.org/10.1149/2.0301602jss
Autor:
Max Kelman, Tae-Woo Kim, Hill Richard J, Tommaso Orzali, Alexey Vert, P. Y. Hung, Zia Karim, Joshua Herman, Saikumar Vivekanand, Satyavolu S. Papa Rao, Gensheng Huang
Publikováno v:
Journal of Crystal Growth. 427:72-79
We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f76490f93dad1e9abc9f6689dddc129
https://doi.org/10.1016/j.jcrysgro.2015.07.013
https://doi.org/10.1016/j.jcrysgro.2015.07.013
Autor:
Satyavolu S. Papa Rao, Hill Richard J, Gensheng Huang, Tommaso Orzali, Alexey Vert, Joshua Herman, Rinus T. P. Lee, Aras Norvilas
Publikováno v:
Journal of Crystal Growth. 426:243-247
Tellurium has several remarkable properties that make it an attractive n-type dopant in III–V semiconductors, namely high incorporation and activation efficiency resulting in high achievable doping levels in combination with a low diffusion coeffic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475f1408eb209f9c0c1dc67d0a5c86f4
https://doi.org/10.1016/j.jcrysgro.2015.05.007
https://doi.org/10.1016/j.jcrysgro.2015.05.007
Publikováno v:
Journal of Crystal Growth. 405:81-86
Defect reduction in epitaxial InP on nanopatterned exact Si (001) substrates was investigated. Top-down lithography and dry etching were used to define 30 nm-wide SiO2 trench openings, with concaves recessed into the Si substrates. Uniformly distribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2496c0e48856dae511ec1dc6216b60
https://doi.org/10.1016/j.jcrysgro.2014.07.052
https://doi.org/10.1016/j.jcrysgro.2014.07.052
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 2:1750-1758
Geothermal well logging and instrumentation applications require electronics capable of operation at 300°C. SiC device technology enables the design and fabrication of analog circuits that can operate at these temperatures. However, to build functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68ec181f8d55502ae494190e5f149b02
https://doi.org/10.1109/tcpmt.2012.2204995
https://doi.org/10.1109/tcpmt.2012.2204995
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 2:1739-1749
Geothermal well logging and instrumentation applications require high-temperature logging tools and sensors with long-term operation capability at 300°C. Advanced SiC technology has enabled high-temperature electronics. To build functional systems o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08119c55af01461db2fc37ca99754511
https://doi.org/10.1109/tcpmt.2012.2217142
https://doi.org/10.1109/tcpmt.2012.2217142