Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Alexey V. Ershov"'
Autor:
Sergey Yu. Turishchev, Dmitry A. Koyuda, Alexey V. Ershov, Ulii A. Vainer, Tatiana V. Kulikova, Boris L. Agapov, Elena N. Zinchenko, Margarita V. Grechkina, Daria S. Usoltseva, Vladimir A. Terekhov
Publikováno v:
Конденсированные среды и межфазные границы, Vol 20, Iss 3, Pp 477-485 (2018)
With the use of scanning electron microscopy, atomic force microscopy and X-ray diffraction the morphology, composition and structure evolution of a-Si/ZrO2 and a-SiOx/ZrO2 multilayered nanoperiodical structures subjected to high temperature anneali
Externí odkaz:
https://doaj.org/article/7ff1d2d870f94f5f8caf21432f0e75da
Autor:
Dmitry A. Koyuda, Vladimir A. Terekhov, Alexey V. Ershov, Elena V. Parinova, Alexandra K. Pisliaruk, Irina A. Karabanova, Sergey Yu. Turishchev
Publikováno v:
Конденсированные среды и межфазные границы, Vol 20, Iss 3, Pp 401-412 (2018)
With the use of high brilliance synchrotron radiation the composition and structure of a-Si/ZrO2 and a-SiOx/ZrO2 multilayered nanoperiodical structures subjected to high temperature annealing were investigated. Each ZrO2 layers thickness was 2 nm whi
Externí odkaz:
https://doaj.org/article/921b3719f02b45ffa90408c9d1e27787
Autor:
Anatoly F, Zatsepin, Evgeny A, Buntov, Dmitry A, Zatsepin, Ernst Z, Kurmaev, Vladimir A, Pustovarov, Alexey V, Ershov, Neil W, Johnson, Alexander, Moewes
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 31(41)
X-ray and optical spectroscopies were applied in order to study the band structure and electronic excitations of the SiO
Autor:
E. A. Buntov, Alexey V Ershov, Alexander Moewes, A. F. Zatsepin, V. A. Pustovarov, Ernst Z. Kurmaev, D. A. Zatsepin, Neil W. Johnson
Publikováno v:
Journal of Physics: Condensed Matter. 31:415301
X-ray and optical spectroscopies were applied in order to study the band structure and electronic excitations of the SiO x /R y O z (R = Si, Al, Zr) suboxide superlattices. The complementary x-ray emission and absorption measurements allow for the ba
Autor:
Alexey V. Ershov, Nicolas G. Bazan
Publikováno v:
Journal of Neuroscience Research. 60:328-337
Phagocytosis of tips of rod outer segments (ROS) by retinal pigment epithelial (RPE) cells is vitally important for maintaining structural and functional integrity of the retina. We previously reported that receptor-mediated specific phagocytosis of
Autor:
Nicolas G. Bazan, Alexey V. Ershov
Publikováno v:
Journal of Neuroscience Research. 58:254-261
Retinal pigment epithelium (RPE) cells in culture display selective induction of certain early response transcription factors at the onset of photoreceptor rod outer segment (ROS)-specific phagocytosis (Ershov et al., 1996a). Moreover, this response
Publikováno v:
Journal of Neuroscience Research. 57:479-486
Retinal pigment epithelial cells (RPE) actively retrieve and recycle docosahexaenoic acid (DHA, 22:6n-3) from phagosomal phospholipids back to photoreceptor cells. Here we studied the fate of DHA in primary culture rat RPE cells after feeding with a
Publikováno v:
Journal of Biological Chemistry. 271:28458-28462
Expression of early response genes during rod outer segment phagocytosis by normal Long Evans and Royal College of Surgeons-rdy+p+ rats and by dystrophic Royal College of Surgeons-p+ rat retinal pigment epithelial cells was studied in primary cell cu
Publikováno v:
Experimental Eye Research. 63:255-264
We have previously produced a polyclonal antiserum (R1S5) against a plasma membrane-enriched fraction of rat retinal pigment epithelial (RPE) cells which inhibits the phagocytosis of photoreceptor outer segments (OS) by these cells. This antiserum ha
Autor:
A. A. Ezhevskii, Alexander I. Mashin, Dmitri A. Khokhlov, Nikolay I. Mashin, A. F. Khokhlov, Alexey V. Ershov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:257-261
The influence of the Ge+ dose and post-implantation annealing on the dc dark-, photo conductivity and EPR of amorphous Si films have been investigated. Amorphous Si (a-Si) thin films have been deposited by evaporation. Doses ranged from 6 × 1014 to