Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Alexey V. Afanasyev"'
Autor:
Victor V. Luchinin, Adolf Schöner, Alexey V. Afanasyev, Vladimir A. Ilyin, Sergey A. Reshanov, Aleksey I. Mikhaylov
Publikováno v:
Semiconductors. 54:122-126
A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p-region is proposed. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b58ba5cc1eba86a15005ba8fa6159c
https://doi.org/10.1134/s1063782620010157
https://doi.org/10.1134/s1063782620010157
Autor:
Artem A. Smirnov, K. Sergushichev, Vladimir A. Ilyin, Boris Ivanov, Sergey A. Shevchenko, Alexey V. Afanasyev
Publikováno v:
2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).
The results of an experimental study of low-voltage 4H-SiC drift step recovery diodes (DSRDs) are presented. Theoretical analysis of the diodes’ operation has been carried out by Synopsys Sentaurus TCAD simulation using drift-diffusion charge trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ae1f9a103d1d9f309fa587caed34536
https://doi.org/10.1109/eiconrus49466.2020.9039004
https://doi.org/10.1109/eiconrus49466.2020.9039004
Autor:
Victor V. Luchinin, Vladimir A. Ilyin, K. Sergushichev, Boris Ivanov, Adolf Schöner, Yuri S. Demin, Artem A. Smirnov, Sergey A. Reshanov, Alexey F. Kardo-Sysoev, Alexey V. Afanasyev
Publikováno v:
Materials Science Forum. 924:841-844
The paper reports on the studies of static and dynamic characteristics of 30 kV diode stacks based on 4H-SiC drift step recovery diodes (DSRDs). It was found that the optimal performance in terms of blocking voltage and switching speed can be achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba43bb08a82939c8d8f4dea369385d1
https://doi.org/10.4028/www.scientific.net/msf.924.841
https://doi.org/10.4028/www.scientific.net/msf.924.841
Autor:
A. A. Smimov, Vladimir A. Ilyin, Alexey V. Afanasyev, Victor V. Luchinin, Adolf Schöner, K. Sergushichev, Sergey A. Reshanov
Publikováno v:
Materials Science Forum. 897:614-617
4H-SiC UV-photodetectors based on full-epitaxial p +p-n+ multilayer structures werefabricated. The diodes were irradiated with fast neutrons up to the fluence of 1·1014 cm-2 . Current-voltage characteristics, life time of non-equilibrium charge carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5563b427743bf7bab281a8ee5260f93d
https://doi.org/10.4028/www.scientific.net/msf.897.614
https://doi.org/10.4028/www.scientific.net/msf.897.614
Autor:
Victor V. Luchinin, Artem A. Smirnov, Vladimir A. Ilyin, Boris Ivanov, Alexey V. Afanasyev, Sergey A. Shevchenko
Publikováno v:
2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON).
The classical theory of p-i-n rectifiers operation at high current densities [8] is generalized to the case of incomplete dopants ionization and bandgap narrowing in heavily doped regions. An impact of the following effects on the emitters injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a56f5cc69c301258cd72fae8c5a746
https://doi.org/10.1109/rtucon48111.2019.8982301
https://doi.org/10.1109/rtucon48111.2019.8982301
Autor:
Sergey A. Reshanov, Victor V. Luchinin, Vladimir A. Ilyin, Adolf Schöner, Aleksey I. Mikhaylov, Alexey V. Afanasyev
Publikováno v:
Semiconductors. 50:824-827
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5a419f9308bb1f0a5abcac70b616b4
https://doi.org/10.1134/s1063782616060178
https://doi.org/10.1134/s1063782616060178
Autor:
Victor V. Luchinin, Giovanni Alfieri, Aleksey I. Mikhaylov, H. Bartolf, Lars Knoll, Alexey V. Afanasyev, Sergey A. Reshanov, Adolf Schöner, Renato Minamisawa
Publikováno v:
Materials Science Forum. 858:651-654
High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N2O. The maximum field-effect mobility of 81 and 114 cm2/Vs were achieved, respectively. The MOSFET fabrication was done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659ed0dcaffcfd9c3120dcf1fbfc845d
https://doi.org/10.4028/www.scientific.net/msf.858.651
https://doi.org/10.4028/www.scientific.net/msf.858.651
Autor:
Sergey A. Reshanov, Adolf Schöner, Vladimir A. Ilyin, Artem A. Smirnov, Victor V. Luchinin, Alexey F. Kardo-Sysoev, K. Sergushichev, Boris Ivanov, Alexey V. Afanasyev
Publikováno v:
Materials Science Forum. 858:786-789
The paper reports on the results of the studies of static and dynamic characteristics of 4H-SiC drift step recovery diodes (DSRDs) assembled in diode stacks. Switching performance of single dies has been simulated and experimentally confirmed. It was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af9be960d6e7e3f4a0d16da6b460dac
https://doi.org/10.4028/www.scientific.net/msf.858.786
https://doi.org/10.4028/www.scientific.net/msf.858.786
Autor:
Alexey V. Afanasyev, Renato Minamisawa, Giovanni Alfieri, Lars Knoll, H. Bartolf, Victor V. Luchinin, Aleksey I. Mikhaylov, Sergey A. Reshanov, Adolf Schöner
Publikováno v:
Materials Science Forum. :480-483
Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401b47957387bf12e8fcc80d861224cd
https://doi.org/10.4028/www.scientific.net/msf.821-823.480
https://doi.org/10.4028/www.scientific.net/msf.821-823.480
Autor:
Victor V. Luchinin, Alexey F. Kardo-Sysoev, Artem A. Smirnov, Alexey V. Afanasyev, Adolf Schöner, Vladimir A. Ilyin, Sergey A. Reshanov, Boris Ivanov
Publikováno v:
Materials Science Forum. :632-635
In this paper we report on the effect of temperature and injection level on the effective lifetime of non-equilibrium charge carriers in p-base of 4H-SiC PiN diodes. Studies were carried out on 1kV drift step recovery diodes (DSRDs) with p+-p--n+. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bdf0e0474db51d19b6759835e2363e4
https://doi.org/10.4028/www.scientific.net/msf.821-823.632
https://doi.org/10.4028/www.scientific.net/msf.821-823.632