Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Alexey Razin"'
Autor:
Omer Luria, Mor Elgarisi, Valeri Frumkin, Alexey Razin, Jonathan Ericson, Khaled Gommed, Daniel Widerker, Israel Gabay, Ruslan Belikov, Jay Bookbinder, Edward Balaban, Moran Bercovici
Publikováno v:
npj Microgravity, Vol 9, Iss 1, Pp 1-10 (2023)
Abstract In the absence of gravity, surface tension dominates over the behavior of liquids. While this often poses a challenge in adapting Earth-based technologies to space, it can also provide an opportunity for novel technologies that utilize its a
Externí odkaz:
https://doaj.org/article/f18f50edca584e1eac0f74110fc2534d
Publikováno v:
Nanotechnology. 32:335202
We demonstrate band to band tunneling (BTBT) in a carbon nanotube (CNT) field effect transistor. We employ local electrostatic doping assisted by charged traps within the oxide to produce an intramolecular PN junction along the CNT. These characteris
Autor:
Eitan M. Hajaj, Yael Pascal‐Levy, Evgeny Shifman, Yuval Yaish, Manish Pal-Chowdhury, Valeri Kochetkov, Oleg Shtempluck, Alexey Razin
Publikováno v:
ChemPhysChem. 13:4202-4206
Humidity plays an important role in molecular electronics. It facilitates charge movement on top of dielectric layers and modifies the device transfer characteristics. Using two different methods to probe temporal charge redistribution on the surface
Autor:
Yoav Eichen, Vladislav Medvedev, Young Jun Yu, Batya Blumer-Ganon, Olga Solomeshch, Alexey Razin, Nir Tessler, Jung-Il Jin
Publikováno v:
Synthetic Metals. 157:841-845
A new derivative (PVK-Ox) of poly(vinyl carbazole) (PVK) was prepared by tethering oxetane pendants to the carbazole group through the decamethylene spacer. Photo-patternability of this new PVK-based polymer was investigated through photo-crosslinkin
Autor:
Gilad Zeevi, M. Shlafman, S. Rechnitz, Yuval Yaish, S. Shlafman, M. Itzhak, V. Kotchtakov, T. Y. Izraeli, Yana Milyutin, T. Tabachnik, Z. Rogachevsky, G. Alchanati, E. M. Hajaj, Alexey Razin, Oleg Shtempluck, H. Nir, I. Goldshtein, Yair Moshe, N. Gordon
Publikováno v:
Nature Communications
Nature Communications, Vol 7, Iss 1, Pp 1-10 (2016)
Nature Communications, Vol 7, Iss 1, Pp 1-10 (2016)
Since their discovery, carbon nanotubes have fascinated many researchers due to their unprecedented properties. However, a major drawback in utilizing carbon nanotubes for practical applications is the difficulty in positioning or growing them at spe
Autor:
Alexey Razin, Nir Tessler, Vlad Medvedev, Domenico Cupertino, Olga Solomeshch, Philip Ross Mackie
Publikováno v:
Advanced Functional Materials. 16:2095-2102
The versatility of light-emitting conjugated polymers in terms of optoelectronic properties is enormous, but tailoring of other essential properties has been relatively limited. In other fields such a problem would be rectified using material formula
Charge Density and Film Morphology Dependence of Charge Mobility in Polymer Field-Effect Transistors
Publikováno v:
Advanced Materials. 15:913-916
The electronic transport in organic semiconducting polymers have been studied extensively in the past decades . Among the physical pictures suggested the most widely accepted one is that of hopping-transport in a disordered-system having a Gaussian d
Publikováno v:
Physical Review B. 88
In this paper, we present measurements of the chemical potential of single-layer graphene as a function of carrier density and temperature, including near the Dirac point. Far from the charge neutrality point, the graphene is homogenous with a single
Publikováno v:
Applied Physics Letters. 108:163104
Hysteresis phenomenon in the transfer characteristics of carbon nanotube field effect transistor (CNT FET) is being considered as the main obstacle for successful realization of electronic devices based on CNTs. In this study, we prepare four kinds o
Autor:
Oleg Shtempluck, Manish Pal-Chowdhury, T. Rabkin, Y. Pascal-Levy, Alexey Razin, V. Kochetkov, I. Kalifa, Evgeny Shifman, Yuval Yaish
Publikováno v:
Physical Review B. 86
Carbon nanotube field-effect transistors (CNT FETs) have many possible applications in future nanoelectronics due to their excellent properties. However, one of the major challenges regarding their performance is the noticeable gate hysteresis which