Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Alexey I. Belov"'
Autor:
Ivan M. Kipelkin, Svetlana A. Gerasimova, Alexey I. Belov, Davud V. Guseinov, Alexander V. Kruglov, Dmitry A. Serov, Max O. Talanov, Alexey N. Mikhaylov, Victor B. Kazantsev
Publikováno v:
Frontiers in Neuroscience, Vol 18 (2024)
In this manuscript, we investigate the memristor-based implementation of neuronal ion channels in a mathematical model and an experimental circuit for a neuronal oscillator. We used a FitzHugh-Nagumo equation system describing neuronal excitability.
Externí odkaz:
https://doaj.org/article/c81ec916fa8947f299b31ce1019295c2
Autor:
Dmitry S. Korolev, Kristina S. Matyunina, Alena A. Nikolskaya, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 870 (2024)
A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga2O3 nanocrystals in a SiO2/Si dielectric matrix. The properties of nanocrystals are determined by the conditions of ion synthesis—the parameters o
Externí odkaz:
https://doaj.org/article/02debf94f355450e927584dacc2dd846
Autor:
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, Evgeny G. Gryaznov, Elena S. Orlova, Sergey A. Shchanikov, Alexey N. Mikhaylov, Sungjun Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 14, p 2082 (2023)
The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully
Externí odkaz:
https://doaj.org/article/c9e6b0f9adc6481492115bcf5bbf952b
Autor:
Dmitry S. Korolev, Ruslan N. Kriukov, Kristina S. Matyunina, Alena A. Nikolskaya, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 13, Iss 10, p 1658 (2023)
The ion-beam synthesis of Ga2O3 nanocrystals in dielectric matrices on silicon is a novel and promising way for creating nanomaterials based on gallium oxide. This research studies the regularities of changes, depending on the synthesis regimes used,
Externí odkaz:
https://doaj.org/article/9ba9490f1f5546028b47a58864547d8d
Autor:
Dmitry S. Korolev, Kristina S. Matyunina, Alena A. Nikolskaya, Ruslan N. Kriukov, Alexey V. Nezhdanov, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, Pavel A. Yunin, Mikhail N. Drozdov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 12, Iss 11, p 1840 (2022)
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gal
Externí odkaz:
https://doaj.org/article/3860753ae2764b7483c354de9bc96814
Autor:
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry S. Korolev, Alexander V. Kruglov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, David I. Tetelbaum, Alexey N. Mikhaylov, Sergey A. Shchanikov, Sungjun Kim, Bernardo Spagnolo
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 12, Iss 1, p 14 (2022)
Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based o
Externí odkaz:
https://doaj.org/article/d931f101a03b4e5baad5d0e2f4e0dfc9
Autor:
Svetlana A. Gerasimova, Alexey I. Belov, Dmitry S. Korolev, Davud V. Guseinov, Albina V. Lebedeva, Maria N. Koryazhkina, Alexey N. Mikhaylov, Victor B. Kazantsev, Alexander N. Pisarchik
Publikováno v:
Sensors, Vol 21, Iss 16, p 5587 (2021)
We propose a memristive interface consisting of two FitzHugh–Nagumo electronic neurons connected via a metal–oxide (Au/Zr/ZrO2(Y)/TiN/Ti) memristive synaptic device. We create a hardware–software complex based on a commercial data acquisition s
Externí odkaz:
https://doaj.org/article/4ad579de849f4114babf93ad17242e52
Autor:
Maria N. Koryazhkina, Margarita A. Ryabova, Evgeniya V. Okulich, Alexey I. Belov, Ivan N. Antonov, Maria E. Shenina, Sergey A. Shchanikov, Alexey N. Mikhaylov, Dmitrii O. Filatov, Davide Valenti, Bernardo Spagnolo
Publikováno v:
physica status solidi (a). :2200742
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05323551b1f9ba94bb45e4e2021ae5a1
https://doi.org/10.1002/pssa.202200742
https://doi.org/10.1002/pssa.202200742
Autor:
David Maldonado, Alexey I. Belov, Maria N. Koryazhkina, Francisco Jiménez-Molinos, Alexey N. Mikhaylov, Juan B. Roldán
Publikováno v:
physica status solidi (a). :2200520
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afa43c06d15169cfc7858c60b59f9173
https://doi.org/10.1002/pssa.202200520
https://doi.org/10.1002/pssa.202200520