Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Autor: Daniele Barettin, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev, Alessandro Pecchia, Matthias Auf der Maur, Sergey Yu. Karpov, Nikolay Cherkashin

Publikováno v: Nanomaterials, Vol 13, Iss 8, p 1367 (2023)

A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the devic

Externí odkaz: https://doaj.org/article/a44fd4a473114c57a48122fa22b9e150

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Autor: Dmitri S. Arteev, Alexei V. Sakharov, Wsevolod V. Lundin, Evgenii E. Zavarin, Andrey E. Nikolaev, Andrey F. Tsatsulnikov, Viktor M. Ustinov

Publikováno v: Materials, Vol 15, Iss 24, p 8945 (2022)

The results of the study of the influence of Fe segregation into the unintentionally doped GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on the electrical properties of two-dimensional electron gas are presented.

Externí odkaz: https://doaj.org/article/18bb229a5b49456b9c924b601605ab01

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Autor: Amit Yadav, Ilya E. Titkov, Alexei V. Sakharov, Wsevolod V. Lundin, Andrey E. Nikolaev, Grigorii S. Sokolovskii, Andrey F. Tsatsulnikov, Edik U. Rafailov

Publikováno v: Applied Sciences, Vol 8, Iss 7, p 1158 (2018)

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This devi

Externí odkaz: https://doaj.org/article/9e6b5d5d83474c57b625750330973a85

Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode

Autor: Alexei V. Sakharov, Andrey F. Tsatsulnikov, Thomas J. Slight, Sergey Yu. Karpov, Amit Yadav, I. E. Titkov, Andrei Gorodetsky, Edik U. Rafailov

Publikováno v: Laser & Photonics Reviews. 10:1031-1038

The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f1f015516ccb2dfbe7d4d52ed8c96dfc
https://doi.org/10.1002/lpor.201600196

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Autor: Alexei V. Sakharov, Maxim Korytov, Daniele Barettin, W. V. Lundin, Nikolay Cherkashin, Aldo Di Carlo, Andrei F. Tsatsulnikov, Martin Hÿtch, Alessandro Pecchia, Sergey Yu. Karpov, Andrei E Nikolaev, Matthias Auf der Maur

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩
Nanotechnology, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩

International audience; We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by meta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02b08e07cc0471257b595a37317b12c9
https://pubmed.ncbi.nlm.nih.gov/28612754