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Autor:
Rodion R. Fakhrutdinov, Vadim Y. Shein, Konstsntin V. Murasov, Viktor V. Erokhin, Sergey A. Zavyalov, Alexei N Liashyk
Publikováno v:
2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
In the article results of low noise distributed-gain amplifier designing in 130 nm SiGe process are presented. Low noise amplifier is based on five amplification sections connected by means of micro strip transmission lines. Each amplification sectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6aa3b57658061aceabdbf5b865d5d0
https://doi.org/10.1109/edm.2019.8823198
https://doi.org/10.1109/edm.2019.8823198
