Zobrazeno 1 - 10
of 307
pro vyhledávání: '"Alexei Gruverman"'
Autor:
Haidong Lu, Dong-Jik Kim, Hugo Aramberri, Marco Holzer, Pratyush Buragohain, Sangita Dutta, Uwe Schroeder, Veeresh Deshpande, Jorge Íñiguez, Alexei Gruverman, Catherine Dubourdieu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract HfO2-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widel
Externí odkaz:
https://doaj.org/article/4f5ee4837dbb4177a3443d1b75c52766
Autor:
Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder
Publikováno v:
Advanced Science, Vol 11, Iss 16, Pp n/a-n/a (2024)
Abstract Ferroelectric wurtzite‐type aluminum scandium nitride (Al1−xScxN) presents unique properties that can enhance the performance of non‐volatile memory technologies. The realization of the full potential of Al1−xScxN requires a comprehe
Externí odkaz:
https://doaj.org/article/bac153d85d1c4f2fb1809fc2bf713d5b
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Alexey Lipatov, Pradeep Chaudhary, Zhao Guan, Haidong Lu, Gang Li, Olivier Crégut, Kokou Dodzi Dorkenoo, Roger Proksch, Salia Cherifi-Hertel, Ding-Fu Shao, Evgeny Y. Tsymbal, Jorge Íñiguez, Alexander Sinitskii, Alexei Gruverman
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospe
Externí odkaz:
https://doaj.org/article/d8b91459ff8141318fc94f6e40258342
Autor:
Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek, Claudia Richter, Hugo Aramberri, Haidong Lu, Uwe Schroeder, Emmanuel Defay, Alexei Gruverman, Jorge Íñiguez
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
HfO2 is a promising ferroelectric material for applications in electronics but knowledge on its ferroic and electromechanical response properties is still lacking. Here, the authors demonstrate the peculiar piezoresponse of HfO2, predicting on how to
Externí odkaz:
https://doaj.org/article/6b302abdbcab462f9122a1397a3c7abb
Autor:
Ather Mahmood, Will Echtenkamp, Mike Street, Jun-Lei Wang, Shi Cao, Takashi Komesu, Peter A. Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Voltage control of magnetization is critical for the development of antiferromagnetic spintronics. Here, using magnetic force microscopy and Hall measurements, Mahmood et al. demonstrate controlled rotation of the Néel vector in a heterostructure co
Externí odkaz:
https://doaj.org/article/480e7655ec4e4da791319a4d92ef4d89
Autor:
Yuze Lin, Yuchuan Shao, Jun Dai, Tao Li, Ye Liu, Xuezeng Dai, Xun Xiao, Yehao Deng, Alexei Gruverman, Xiao Cheng Zeng, Jinsong Huang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Intentional doping is important in semiconductors in order to tune the material property, yet the mechanism in metal halide perovskite is not well-understood. Here, the authors use silver, strontium, and cerium ions to showcase n-type doping on perov
Externí odkaz:
https://doaj.org/article/a5def84670724441930bdce3d9f48497
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
Abstract Since its inception more than 25 years ago, Piezoresponse Force Microscopy (PFM) has become one of the mainstream techniques in the field of nanoferroic materials. This review describes the evolution of PFM from an imaging technique to a set
Externí odkaz:
https://doaj.org/article/02c6872dc5104de8b0ed9ee52ea360e2
Autor:
Michael J. Loes, Alexey Lipatov, Nataliia S. Vorobeva, Haidong Lu, Jehad Abourahma, Dmitry S. Muratov, Alexei Gruverman, Alexander Sinitskii
Publikováno v:
ACS Applied Electronic Materials. 5:705-713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532486b0e26fe5be790bc794aae84500
https://doi.org/10.1021/acsaelm.2c00947
https://doi.org/10.1021/acsaelm.2c00947
Autor:
Saman Bagheri, Jehad Abourahma, Haidong Lu, Nataliia S. Vorobeva, Shengyuan Luo, Alexei Gruverman, Alexander Sinitskii
Publikováno v:
Nanoscale. 15:1248-1259
We demonstrate a high-yield fabrication of electromechanical devices based on suspended monolayer Ti3C2Tx MXene flakes. The MXene membranes were electrostatically actuated over multiple cycles and with different frequencies, amplitudes, and loads.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18193027adecec1066dca97d053c61d7
https://doi.org/10.1039/d2nr05493k
https://doi.org/10.1039/d2nr05493k