Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Alexandre Le Roch"'
Autor:
Hugo Dewitte, Philippe Paillet, Alexandre Le Roch, Serena Rizzolo, Claude Marcandella, Vincent Goiffon
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1428-1436
Autor:
Aubin Antonsanti, Cedric Virmontois, Jean-Marie Lauenstein, Alexandre Le Roch, Hugo Dewitte, Vincent Goiffon
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1506-1514
Autor:
Cedric Virmontois, Alexandre Le Roch, Vincent Goiffon, Hugo Dewitte, Serena Rizzolo, Philippe Paillet, Claude Marcandella
Publikováno v:
IEEE Transactions on Nuclear Science. 69:290-298
The paper studies the radiation effects on the junction leakage random telegraph signal (JL-RTS). Using arrays of transistors, a statistical study of the phenomenon in MOSFETs source p-n junctions is performed and the impact of the electric field, th
Autor:
Vincent Goiffon, Hugo Dewitte, Philippe Paillet, Alexandre Le Roch, Claude Marcandella, Serena Rizzolo
Publikováno v:
IEEE Transactions on Nuclear Science. 68:697-706
This article investigates the effect of ultra-high total ionizing dose up to 450 Mrad(SiO2) on 180-nm MOSFETs for analog applications. In particular, it studies the influence of the transistor size, design, type, bias, and the annealing on radiation-
Autor:
Xiaoli Sun, Wei Lu, Guangning Yang, Sachidananda Babu, Jean-Marie Lauenstein, Alexandre Le Roch, Ian Baker
Publikováno v:
Infrared Technology and Applications XLVIII.
Autor:
Aubin Antonsanti, Vincent Goiffon, François Roy, Alexandre Le Roch, Landen D. Ryder, Victor Malherbe, Philippe Roche, Olivier Nier, Cédric Virmontois, Jean-Marie Lauenstein
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Autor:
Elie Cobo, Sébastien Massenot, Alexandre Le Roch, Franck Corbière, Vincent Goiffon, Pierre Magnan, Jean-Luc Pelouard
Publikováno v:
Applied optics. 61(4)
Complementary metal–oxide semiconductor (CMOS) image sensor sensitivity in the near-infrared spectrum is limited by the absorption length in silicon. To deal with that limitation, we evaluate the implementation of a polysilicon nano-grating inside
Autor:
Jean-Marc Belloir, Vincent Goiffon, Federico Pace, Alexandre Le Roch, Philippe Paillet, Pierre Magnan, Clementine Durnez, Cedric Virmontois, Serena Rizzolo
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2019, 66 (3), pp.616-624. ⟨10.1109/TNS.2019.2892645⟩
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018)
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.616-624
IEEE Transactions on Nuclear Science, 2019, 66 (3), pp.616-624. ⟨10.1109/TNS.2019.2892645⟩
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018)
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.616-624
International audience; This study investigates the leakage currents as well as the leakage current random telegraph signals sources in sense node floating diffusions and their consequences on imaging performances specifically after exposure to high
Autor:
Vincent Goiffon, Olivier Marcelot, Marc Gaillardin, Serena Rizzolo, Alexandre Le Roch, Franck Corbière, Pierre Magnan, Philippe Paillet
Publikováno v:
IEEE Transactions on Nuclear Science.
CMOS image sensors (CISs) hardened by design against total ionizing dose (TID) are exposed to neutron fluences beyond 1014 n(1 MeV)/cm2. Neutron-irradiated devices show a huge increase in the dark current affecting uniformly the pixel array which lea
Autor:
Philippe Paillet, Olivier Marcelot, Alexandre Le Roch, Cedric Virmontois, Laura Mont Casellas, Marco Van Uffelen, Vincent Goiffon, Hugo Dewitte, Serena Rizzolo, Pierre Magnan, Jean-Marc Belloir
Publikováno v:
IEEE Transactions on Nuclear Science.
This work investigates the role of the phosphorus doping element in the radiation-induced dark current in a CMOS image sensor (CIS) photodiode. The neutron and proton irradiations on shallow arsenic-based photodiode CISs and deep phosphorus-based pho