Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Alexandre Kerlain"'
Autor:
Olivier Gravrand, Clément Lobre, Jean-Louis Santailler, Nicolas Baier, Wilfried Rabaud, Alexandre Kerlain, Diane Sam-Giao, Pascal Leboterf, Benoit Cornus, Laurent Rubaldo
Publikováno v:
Infrared Technology and Applications XLVIII.
Autor:
Alexandre Kerlain, Vincent Mosser
Publikováno v:
Sensors and Actuators A: Physical. 142:528-532
We show that the low-frequency noise of AlGaAs/InGaAs/GaAs quantum well Hall sensors (QWHS) can be cancelled using a method similar to the spinning current method. A two-phase permutation of the current biasing electrodes and the voltage sensing elec
Autor:
Vincent Mosser, Alexandre Kerlain
Publikováno v:
Sensor Letters. 5:192-195
Publikováno v:
Materials Science Forum. :1177-1180
Autor:
Narcis Mestres, Christian Brylinski, Erwan Morvan, Servane Blanqué, Alexandre Kerlain, Jean Camassel, Christian Dua, Phillippe Godignon, Ramon Pérez, Marcin Zielinski
Publikováno v:
Materials Science Forum. :893-896
We report a comparative investigation of the activation kinetics of nitrogen and phosphorus ions implanted at room temperature in 4H-SiC semi-insulating substrates. We characterised the electrical activation through a fast non-contact method (eddy cu
Publikováno v:
Materials Science Forum. :731-736
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2008, 104 (5), pp.053705. ⟨10.1063/1.2968436⟩
Journal of Applied Physics, American Institute of Physics, 2008, 104 (5), pp.053705. ⟨10.1063/1.2968436⟩
International audience; Using finite element analysis, we have calculated the Hall voltage of gated Hall sensors in the temperature range (−55 °C, 125 °C). We investigated how both the sensor shape and the external connections influence the Hall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b38d08b596b2b10ed200915d5c2afa0
https://hal.archives-ouvertes.fr/hal-00388502/document
https://hal.archives-ouvertes.fr/hal-00388502/document
Autor:
Vincent Mosser, Alexandre Kerlain
Publikováno v:
AIP Conference Proceedings.
We promote here the use of cross‐shaped 4‐terminal devices (Hall crosses) to measure LF noise spectra in planar technologies. The implementation of this method is described. When investigating LF noise for the purpose of material or process chara
The stability of metal layers on semiconductors is a key issue for the device electrical performances. Therefore, the reliability of SiC/Ti/Pt/Au system was investigated using storage steady-stress testing, AES (Auger Electron Spectrometry), and SIMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0533ce3f0f5745e1a709e02b8610ae92
http://hdl.handle.net/11577/2515279
http://hdl.handle.net/11577/2515279