Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Alexandre Giry"'
Autor:
Joe Bachi, Ayssar Serhan, Dang-Kien Germain Pham, Damien Parat, Pascal Reynier, Patricia Desgreys, Alexandre Giry
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, pp.5. ⟨10.1109/TCSII.2022.3185174⟩
IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, pp.5. ⟨10.1109/TCSII.2022.3185174⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::674b1806686aeb3e60796d06241a8933
https://telecom-paris.hal.science/hal-03765642
https://telecom-paris.hal.science/hal-03765642
Autor:
R. Mourot, A. Gouvea, D. Parat, M. Gaye, P. Reynier, A. Cardoso, Alexandre Giry, Ayssar Serhan, S. Nogueira, P. Kauv
Publikováno v:
2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents the first high-power SOI-CMOS power amplifier (PA) embedded in a Fan-Out Wafer Level Package (FOWLP) and addressing 2.4 GHz Wi-Fi 6 applications. At 2.44 GHz, the PA delivers 35.1 dBm of saturated output power (P sat ) with 53% of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b0b5b58c5afbd3e7b29235358445bf
https://doi.org/10.1109/rfic51843.2021.9490483
https://doi.org/10.1109/rfic51843.2021.9490483
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 66:958-962
This brief describes an integrated system performing automatic matching of antenna impedance, suitable for applications within the 433 MHz ISM band. The detected impedance can be matched to ${50}~{\Omega }$ . Consequently the input S-parameter of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55757049a34ab39b10488e075847788f
https://doi.org/10.1109/tcsii.2018.2834158
https://doi.org/10.1109/tcsii.2018.2834158
Autor:
M. Borremans, D. Parat, R. Mourot, P. Indirayanti, C. De Ranter, R. Berro, Alexandre Giry, E. Mercier, M. Pezzin, Ayssar Serhan, K. Han, F. Chaix, P. Reynier
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A reconfigurable broadband Doherty PA module for LTE HPUE (High Power User Equipment) applications is presented, which is the first to be based on an SOI-CMOS PA without predistortion and supply modulation. The PA die (1.3×1.7mm2) is fabricated in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26374db5ba701ccc172cc18d9a5023d6
https://doi.org/10.1109/rfic49505.2020.9218305
https://doi.org/10.1109/rfic49505.2020.9218305
Publikováno v:
NEWCAS
5G are stimulating major research efforts on next-generation power amplifiers (PAs). This paper presents a comprehensive overview of recent linear watt-level PA developments for mobile applications operating below 6GHz. A survey on state-of-the-art P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c084338fb2cc2aed1183376de0a8418c
https://doi.org/10.1109/newcas49341.2020.9159835
https://doi.org/10.1109/newcas49341.2020.9159835
Publikováno v:
EAI Endorsed Transactions on Cognitive Communications, Vol 3, Iss 11, Pp 1-8 (2017)
The demand for spectrum resources has increased dramatically with the explosion of wireless mobile devices and services. The Cognitive Radio (CR) associated with TV white space frequencies defined between 470 MHz to 790 MHz is one solution to excel t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3a20a948c0271a82482cc79ed79e6d9
http://eudl.eu/doi/10.4108/eai.31-5-2017.152558
http://eudl.eu/doi/10.4108/eai.31-5-2017.152558
Autor:
Estelle Lauga-Larroze, Alexandre Giry, Ayssar Serhan, Alexis Divay, Jean-Daniel Arnould, Pascal Reynier, Saad Boutayeb, Damien Parat
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
This work presents a SOI-LDMOS Dual-Input Doherty Power Amplifier (DPA). The proposed DPA is implemented in a 130nm SOI-CMOS technology and packaged using flip-chip on a laminate substrate. Low DPA combiner loss is achieved using high-Q inductors emb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed552416c84d8c16790e5a933df3d52
https://doi.org/10.1109/s3s46989.2019.9320747
https://doi.org/10.1109/s3s46989.2019.9320747
Autor:
Alexandre Giry, Ayssar Serhan, R. Mourot, R. Berro, E. Mercier, M. Borremans, D. Parat, P. Indirayanti, P. Reynier, C. De Ranter
Publikováno v:
NEWCAS
The need for RF Front-Ends Module (FEM) with reduced size and cost is driving research towards highly integrated Power Amplifiers (PA) with challenging linearity and efficiency requirements. To overcome efficiency challenges, the Doherty PA (DPA) arc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c98bb134d8a851781cf9057f010a5ff
https://doi.org/10.1109/newcas44328.2019.8961306
https://doi.org/10.1109/newcas44328.2019.8961306
Publikováno v:
IEEE International New Circuits and Systems Conference (NEWCAS)
IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2019, Munich, Germany. pp.1-4, ⟨10.1109/NEWCAS44328.2019.8961239⟩
NEWCAS
IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2019, Munich, Germany. pp.1-4, ⟨10.1109/NEWCAS44328.2019.8961239⟩
NEWCAS
A novel analytical approach is used to determine a new boundary condition for optimal operation of a class B Chireix outphasing PA. In the proposed method, a threshold outphasing angle is defined as a new design parameter and used to optimize the pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3bb991264ad5f5d2288f135865bb4cf
https://telecom-paris.hal.science/hal-02296297
https://telecom-paris.hal.science/hal-02296297
Autor:
P. Indirayanti, Ayssar Serhan, Alexandre Giry, M. Borremans, R. Berro, E. Mercier, C. De Ranter, P. Reynier, R. Mourot, D. Parat
Publikováno v:
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents a broadband high-efficiency linear Doherty power amplifier (DPA) for LTE/LTE-A handset applications. The proposed PA is implemented in a 130nm SOI technology and packaged using flip-chip on a laminate substrate. At 2.5GHz, the PA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1940017371bea8d7d7b90b3c0cc9549d
https://doi.org/10.1109/rfic.2019.8701727
https://doi.org/10.1109/rfic.2019.8701727