Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Alexandre Bounouh"'
Autor:
Kevin Louarn, Inès Massiot, Alexandre Bounouh, François Piquemal, Nicolas Cavassilas, Yann Claveau, Ludovic Marigo-Lombart, Alexandre Arnoult, Chantal Fontaine, Guilhem Almuneau
Publikováno v:
ACS Applied Energy Materials
ACS Applied Energy Materials, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩
ACS Applied Energy Materials, ACS, 2019, 〈10.1021/acsaem.8b01700〉
ACS Applied Energy Materials, ACS, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩
ACS Applied Energy Materials, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩
ACS Applied Energy Materials, ACS, 2019, 〈10.1021/acsaem.8b01700〉
ACS Applied Energy Materials, ACS, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩
International audience; This article reports on the impact of the thickness and/or the composition on the performance of type-II n+ InGaAs/p+ GaAsSb tunnel junctions. The InGaAs/GaAsSb staggered band-offset heterojunction is expected to improve tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27d3684c01b16c26067664b09de6133e
https://hal.laas.fr/hal-01968187/document
https://hal.laas.fr/hal-01968187/document
Autor:
Olivier Dejardin, György Thuroczy, Brigitte Lacour, Olivia Roth-Delgado, Shaiela Kandel, Yves Le Dréan, Alexandre Bounouh, Olivier Merckel, Jean Demarquoy
Publikováno v:
Archives des Maladies Professionnelles et de l'Environnement. 81:667
Introduction L’Anses presente un etat des connaissances sur les dangers lies aux champs electromagnetiques basses frequences (CEM-BF) et les resultats de son expertise collective concernant les risques pour la sante lies aux expositions en milieu p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e00e6673e18f87b2c02f187e6ac254cf
https://doi.org/10.1016/j.admp.2020.03.626
https://doi.org/10.1016/j.admp.2020.03.626
Autor:
Nicolas Cavassilas, Kevin Louarn, Ludovic Marigo-Lombart, Yann Claveau, François Piquemal, Chantal Fontaine, Alexandre Bounouh, Alexandre Arnoult, Guilhem Almuneau
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩
Journal of Physics D: Applied Physics, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩
International audience; In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d56baa825567dc451fe94b5d63aab942
https://hal.science/hal-01761772/document
https://hal.science/hal-01761772/document
Autor:
Murielle Lafaye, Ariane Adam-Poupart, Karine Chalvet-Monfray, Jean-Claude Cohen, Thierry Gauquelin, Colette Le Bâcle, Fabrice Michiels, Caroline Norrant, Serge Planton, Nicolas Viovy, Martine Hours, Francine Behar-Cohen, Jean-Marc Bertho, Jean-Pierre Césarini, Frédéric Couturier, Jean-François Doré, Pierre Ducimetière, Aïcha El Khatib, Nicolas Feltin, Emmanuel Flahaut, Gaffet, E., Philippe Lepoutre, Christophe Martinsons, Catherine Mouneyrac, Alain Muzet, Yves Sicard, Esko Toppila, C. Yardin, Alain Soyez, Alexandre Bounouh, Brigitte Debuire, Thierry Douki, Joël Lelong, Frédéric Moati, Fabien Ndagijimana, Rémi Poirier, Anthony Cadene, Clémence Fourneau, Aurélie Niaudet, Olivier Merckel, Sophia Saddoki
Publikováno v:
[Rapport de recherche] 2013-SA-0216, Agence nationale de sécurité sanitaire de l’alimentation, de l’environnement et du travai (ANSES). 2018
HAL
HAL
Évaluation des risques induits par le changement climatique sur la santé des travailleurs; L’Anses a été saisie le 28 octobre 2013, par la Direction générale de la santé (DGS) et la Direction générale du travail (DGT), pour réaliser une e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2bb8a4b4d2760b2fb944faffaf24eb57
https://hal.archives-ouvertes.fr/hal-01790561/file/AP2013SA0216Ra.pdf
https://hal.archives-ouvertes.fr/hal-01790561/file/AP2013SA0216Ra.pdf
Autor:
Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, Yann Claveau, Ludovic Marigo-Lombart, Inès Massiot, Jonathan Colin, Clara Cornille, Leite, E., Laurent Lombez, Nicolas Cavassilas, François Piquemal, Alexandre Bounouh, Guilhem Almuneau
Publikováno v:
Journées Nationales du Photovoltaïque (JNPV)
Journées Nationales du Photovoltaïque (JNPV), Dec 2017, Dourdan, France. pp.668-676
HAL
Journées Nationales du Photovoltaïque (JNPV), Dec 2017, Dourdan, France. pp.668-676
HAL
National audience; La technologie des cellules solaires tandem (MJSCs) GaAs (1.42 eV)/GaInP (1.87 eV) sur substrat GaAs est très mature, et l'ajout de souscellules solaires de plus petit gap à cette structure bien maîtrisée a permis d'obtenir d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3f928ab99c37df02b5e2c9de20656e19
https://hal.laas.fr/hal-01780593
https://hal.laas.fr/hal-01780593
Autor:
Kevin Louarn, Yann Claveau, Alexandre Arnoult, Chantal Fontaine, Jonathan Colin, Clara Cornille, Inès Massiot, Ludovic Marigo-Lombart, François Piquemal, Alexandre Bounouh, Nicolas Cavassilas, Guilhem Almuneau
Publikováno v:
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017)
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
HAL
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
HAL
Résumé pour une présentation orale / sur poster; National audience; Les Jonctions Tunnel (JT) sont des composants très importants pour les cellules solaires multi-jonction, puisqu'elles assurent la connexion électrique en série entre les diffé
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::31c3612570df14a12dbbc9144809a8d3
https://hal.laas.fr/hal-01610933
https://hal.laas.fr/hal-01610933
Autor:
Kevin Louarn, Yann Claveau, Alexandre Arnoult, Chantal Fontaine, Jonathan Colin, Clara Cornille, François Piquemal, Alexandre Bounouh, Nicolas Cavassilas, Guilhem Almuneau
Publikováno v:
European PV Solar Energy Conference and Exhibition
European PV Solar Energy Conference and Exhibition, Sep 2017, Amsterdam, Netherlands
www.photovoltaic-conference.com
HAL
European PV Solar Energy Conference and Exhibition, Sep 2017, Amsterdam, Netherlands
www.photovoltaic-conference.com
HAL
International audience; Aim and approach-Tunnel Junctions (TJs) are key devices for monolithic Multi-Junction Solar Cells (MJSCs), in which they ensure the series interconnection between the subcells. For GaAs based MJSCs, very low resistive (with pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ced7c07f7aca00b76de1fbe4a8c04f50
https://hal.laas.fr/hal-01617434
https://hal.laas.fr/hal-01617434
Autor:
Denis Belieres, Alexandre Bounouh
Publikováno v:
Measurement. 52:71-76
This paper presents a new and accurate experimental method based on harmonic distortion analysis to determine the resonant frequency of MEMS devices to be used as energy scavengers or more generally in widespread MEMS-based applications. This techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7208b1cfa31d9dc22c95896c35aebaf9
https://doi.org/10.1016/j.measurement.2014.03.013
https://doi.org/10.1016/j.measurement.2014.03.013
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 62:1646-1651
This paper presents the high level of stability of voltage references operated in alternating current (ac) and based on the pull-in effect in split-finger microelectromechanical systems (MEMS). It shows results of both electrical and mechanical chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b1667c4bd00e1a4046f5195b5b227fb
https://doi.org/10.1109/tim.2012.2225963
https://doi.org/10.1109/tim.2012.2225963
Autor:
C. Chantal, François Piquemal, Guilhem Almuneau, Alexandre Arnoult, Yann Claveau, Kevin Louarn, C. Licitra, Thierry Taliercio, François Olivie, Nicolas Cavassilas, Dimitri Hapiuk, Alexandre Bounouh
Publikováno v:
IEEE Xplore
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩
International audience; In this work, Molecular Beam Epitaxy (MBE) grown tunnel junctions (TJs) based on GaAs(Sb)(In) materials are experimentally and numerically studied. From simple GaAs TJs grown with various n-doping levels, we develop a semi-cla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c21dc8b22ad17036783efc8a91c35e8d
https://hal-amu.archives-ouvertes.fr/hal-01436488
https://hal-amu.archives-ouvertes.fr/hal-01436488