Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Alexandre Bondi"'
Autor:
Giovanni Magno, Mickael Fevrier, Philippe Gogol, Abdelhanin Aassime, Alexandre Bondi, Robert Mégy, Béatrice Dagens
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract A strong coupling regime is demonstrated at near infrared between metallic nanoparticle chains (MNP), supporting localized surface plasmons (LSP), and dielectric waveguides (DWGs) having different core materials. MNP chains are deposited on
Externí odkaz:
https://doaj.org/article/8f3f7b2e30ef4f3ba4b6918ceadd469c
Autor:
Alexandre Bondi, Giovanni Magno, Philippe Gogol, R. Megy, Beatrice Dagens, Abdelhanin Aassime, Mickael Fevrier
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
A strong coupling regime is demonstrated at near infrared between metallic nanoparticle chains (MNP), supporting localized surface plasmons (LSP), and dielectric waveguides (DWGs) having different core materials. MNP chains are deposited on the top o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3721726cb0cc3a87277547c3cfe21352
http://europepmc.org/articles/PMC5543061
http://europepmc.org/articles/PMC5543061
Autor:
Tony Rohel, S. Loualiche, Jacky Even, Charles Cornet, A. Le Corre, W. Guo, Soline Boyer-Richard, Nicolas Bertru, Olivier Durand, Alexandre Bondi, Antoine Létoublon
Publikováno v:
Applied Surface Science
Applied Surface Science, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
Applied Surface Science, Elsevier, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
Applied Surface Science, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
Applied Surface Science, Elsevier, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
International audience; We have investigated quantitatively anti-phase domains (APD) structural properties in 20 nm GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive analysis methods. These analyses, including a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::162056fe13f9a65bbe252c59059c6628
https://doi.org/10.1016/j.apsusc.2011.10.139
https://doi.org/10.1016/j.apsusc.2011.10.139
Autor:
Alexandre Boulle, Nicolas Chevalier, Antoine Létoublon, Nicolas Bertru, Olivier Dehaese, Charles Cornet, Olivier Durand, M. Veron, Tony Rohel, Weiming Guo, A. Le Corre, Alexandre Bondi
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. ⟨10.1016/j.jcrysgro.2010.10.137⟩
Journal of Crystal Growth, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. ⟨10.1016/j.jcrysgro.2010.10.137⟩
Journal of Crystal Growth, Elsevier, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. ⟨10.1016/j.jcrysgro.2010.10.137⟩
Journal of Crystal Growth, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. ⟨10.1016/j.jcrysgro.2010.10.137⟩
International audience; 90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth modes are studied. A complete analysis is performed using AFM, TEM imaging and X-ray diffraction giving crucial information on structural defects proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e0d5d51f9966a2af3eff1fe091436db
https://doi.org/10.1016/j.jcrysgro.2010.10.137
https://doi.org/10.1016/j.jcrysgro.2010.10.137
Autor:
Anne Ponchet, S. Boyer, Antoine Létoublon, T. Nguyen Thanh, Olivier Durand, Jacky Even, Alain Moréac, Laurent Pedesseau, Charles Cornet, A. Le Corre, Alexandre Bondi
Publikováno v:
Thin Solid Films
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012)
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012)
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
original title in E-MRS Spring 2012 - Symposium W : "GaP-Si interface grown by molecular beam epitaxy : a Raman and X-ray scattering study"; International audience; Raman spectroscopy was used to investigate the residual strain in thin GaP layers dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68150dfa04b55eeaf42938a3388632a4
https://hal.archives-ouvertes.fr/hal-00788308
https://hal.archives-ouvertes.fr/hal-00788308
Autor:
Beatrice Dagens, Alexandre Bondi, Alexei Chelnokov, Mickael Fevrier, Abdelhanin Aassime, Jean-Michel Lourtioz, Gilles Lerondel, Aniello Apuzzo, R. Megy, Philippe Gogol, Sylvain Blaize
Publikováno v:
OFC/NFOEC
OFC/NFOEC, Mar 2012, Los Angeles, United States
Scopus-Elsevier
Gilles Lerondel
OFC/NFOEC, Mar 2012, Los Angeles, United States
Scopus-Elsevier
Gilles Lerondel
International audience; Plasmonics implementation in optical circuits and interconnects requires interfacing with dielectric optical waveguides. We show here metallic nanoparticles chain mode excitation from SOI waveguide with a record distance lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7385998c99e8e23d4e83215e0a43138d
https://utt.hal.science/hal-02360186
https://utt.hal.science/hal-02360186
Autor:
Jean-Marc Jancu, Alexandre Bondi, Soline Boyer-Richard, Claudine Katan, Laurent Pedesseau, Faical Raouafi, Jacky Even
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩
Applied Physics Letters, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩
Applied Physics Letters, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩
International audience; We illustrate how the linear combination of zone center bulk bands combined with the full-zone k*p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd723f97b65558fd0481aa7b60f2f5c6
https://hal.archives-ouvertes.fr/hal-00604845/document
https://hal.archives-ouvertes.fr/hal-00604845/document
Autor:
Alain Moréac, Hervé Folliot, Soline Boyer-Richard, Slimane Loualiche, Jacky Even, Alain Lecorre, Alexandre Bondi, Olivier Durand, Chistophe Labbé, Charles Cornet, Laurent Pedesseau, Maud Gicquel, Weiming Guo, Nicolas Chevalier, Antoine Létoublon
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2009, 6 (10), pp.2212-2216. ⟨10.1002/PSSC.200881728⟩
Physica Status Solidi C
TNT (Trends in Nanotechnologies)
TNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
physica status solidi (c), 2009, 6 (10), pp.2212-2216. ⟨10.1002/PSSC.200881728⟩
physica status solidi (c), Wiley, 2009, 6 (10), pp.2212-2216. ⟨10.1002/PSSC.200881728⟩
Physica Status Solidi C
TNT (Trends in Nanotechnologies)
TNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
physica status solidi (c), 2009, 6 (10), pp.2212-2216. ⟨10.1002/PSSC.200881728⟩
International audience; III-V quantum wells (QW) superlattices have been grown by molecular beam epitaxy on GaP substrates for photonics applications on silicon. We first present room temperature photoluminescence (PL) results for GaAsP/GaP QWs. A de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::909492bce88cf7bc4b1ab7d27f71fec1
https://hal.archives-ouvertes.fr/hal-00665750
https://hal.archives-ouvertes.fr/hal-00665750
Autor:
Maud Gicquel, Hervé Folliot, Charles Cornet, Olivier Durand, Alexandre Bondi, Weiming Guo, Soline Boyer-Richard, Nicolas Chevalier, Alain Le Corre, Slimane Loualiche, Bassem Alsahwa, Antoine Létoublon, Jacky Even
Publikováno v:
9th International Conference Trends in Nanotechnologies (TNT 2008)
9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
International audience; We have grown InAs and InP quantum dots (QDs) on GaP substrate by Molecular Beam Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and photoluminescence (PL). AFM images confirm the formation of InAs and InP QDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaf375c02fb98ed433638562856d59e1
https://hal.science/hal-00491426
https://hal.science/hal-00491426
Autor:
Jacky Even, C. Labbé, Olivier Dehaese, Weiming Guo, Olivier Durand, Soline Richard, H. Folliot, Charles Cornet, A. Le Corre, Slimane Loualiche, Alexandre Bondi, Laurent Pedesseau
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩
Journal of Physics D: Applied Physics, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩
Journal of Physics D: Applied Physics, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩
We study the properties of highly strained InAs material calculated from first-principles modelling using ABINIT packages. We first simulate the characteristics of bulk InAs crystals and compare them with both experimental and density functional theo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da3ae308820990045447a287007dc154
https://hal.archives-ouvertes.fr/hal-00491451/document
https://hal.archives-ouvertes.fr/hal-00491451/document