Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Alexandra Papadogianni"'
Publikováno v:
Proceedings, Vol 14, Iss 1, p 54 (2019)
To date, there are only a few studies on the gas sensing properties of single crystalline sensors. […]
Externí odkaz:
https://doaj.org/article/593b1c4fb01b46b5ab2be2a366ac778c
Autor:
Rongbin Wang, Thorsten Schultz, Alexandra Papadogianni, Elena Longhi, Christos Gatsios, Fengshuo Zu, Tianshu Zhai, Stephen Barlow, Seth R. Marder, Oliver Bierwagen, Patrick Amsalem, Norbert Koch
Publikováno v:
Small.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::752ac52f093830dd3ba2571b9e986e5a
https://doi.org/10.1002/smll.202300730
https://doi.org/10.1002/smll.202300730
Autor:
Alexandra Papadogianni, Charlotte Wouters, Robert Schewski, Johannes Feldl, Jonas Lähnemann, Takahiro Nagata, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0954b8f0333967da536c2d49a14266
https://doi.org/10.1103/physrevmaterials.6.033604
https://doi.org/10.1103/physrevmaterials.6.033604
Autor:
Holger von Wenckstern, Jonas Michel, Alexandra Papadogianni, Marcel Himmerlich, Daniel Splith, Julius Rombach, Oliver Bierwagen, Marius Grundmann, Stefan Krischok, Theresa Berthold
Publikováno v:
ACS Applied Materials & Interfaces. 11:27073-27087
Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In2O3), is often challenged by the presence of a distinct surface electron accumulation layer. We investigated the material properties and electrical tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6feaf740aeceb237f59959ccdd5013e8
https://doi.org/10.1021/acsami.9b06455
https://doi.org/10.1021/acsami.9b06455
Autor:
Takahiro Nagata, Jonas Lähnemann, Rüdiger Goldhahn, Johannes Feldl, Alexandra Papadogianni, Manfred Ramsteiner, Oliver Bierwagen, Martin Feneberg
The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronic and vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloy films grown by molecular beam epitaxy. Using spectroscopic ellipsometry, a linear dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba19d67dadda7a8ec6393d1715b6dc30
http://arxiv.org/abs/2104.08092
http://arxiv.org/abs/2104.08092
Publikováno v:
Japanese Journal of Applied Physics. 61:045502
The alloying of the group-III transparent semiconducting sesquioxides In$_2$O$_3$ and Ga$_2$O$_3$ can lead to a modulation of the properties of the parent compounds, e.g., the shallow- and deep-donor character of the oxygen vacancy or the presence an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a5ddcb99622f13bd637c1f86e569a20
https://doi.org/10.35848/1347-4065/ac4ec7
https://doi.org/10.35848/1347-4065/ac4ec7
Autor:
Stefan Krischok, Vladimir Polyakov, Oliver Bierwagen, Julius Rombach, Theresa Berthold, Marcel Himmerlich, Alexandra Papadogianni
Publikováno v:
Physical Review B. 102
${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ is an $n$-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant semiconductors, such as InAs, InN, ${\mathrm{SnO}}_{2}$, and ZnO. Even though the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ac43fd128cc6cbe4f87dca0a1ec8f58
https://doi.org/10.1103/physrevb.102.075301
https://doi.org/10.1103/physrevb.102.075301
Autor:
Udo Weimar, Oliver Bierwagen, Nicolae Barsan, Federico Schipani, Alexandru Oprea, Adelina Stanoiu, Cristian E. Simion, Melanie Budde, Alexandra Papadogianni
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Semiconducting metal oxide (SMOX)-based gas sensors are indispensable for safety and health applications, for example, explosive, toxic gas alarms, controls for intake into car cabins, and monitor for industrial processes. In the past, the sensor com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab010ee8071741c04dd19256eae82412
Autor:
Cristian Eugen, Simion, Federico, Schipani, Alexandra, Papadogianni, Adelina, Stanoiu, Melanie, Budde, Alexandru, Oprea, Udo, Weimar, Oliver, Bierwagen, Nicolae, Barsan
Publikováno v:
ACS sensors. 4(9)
Semiconducting metal oxide (SMOX)-based gas sensors are indispensable for safety and health applications, for example, explosive, toxic gas alarms, controls for intake into car cabins, and monitor for industrial processes. In the past, the sensor com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8e130fcca3cb539aa00d70652cafc5e5
https://pubmed.ncbi.nlm.nih.gov/31414598
https://pubmed.ncbi.nlm.nih.gov/31414598
Autor:
Jonas, Michel, Daniel, Splith, Julius, Rombach, Alexandra, Papadogianni, Theresa, Berthold, Stefan, Krischok, Marius, Grundmann, Oliver, Bierwagen, Holger, von Wenckstern, Marcel, Himmerlich
Publikováno v:
ACS applied materialsinterfaces. 11(30)
Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c0c059abd7e9cacf19413c66d699ec9e
https://pubmed.ncbi.nlm.nih.gov/31269791
https://pubmed.ncbi.nlm.nih.gov/31269791