Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alexandra J. Howzen"'
Autor:
Nicholas C. Strandwitz, Matthew R. Peart, Nelson Tansu, Jonathan J. Wierer, Justin C. Goodrich, Onoriode N. Ogidi-Ekoko, Alexandra J. Howzen
Publikováno v:
Solid-State Electronics. 172:107881
Electrical properties of metal-oxide semiconductor (MOS) capacitors were measured with MgO/Al2O3 gate dielectrics deposited by atomic layer deposition (ALD) on GaN. For an Al2O3 (1 nm)/MgO (20 nm) dielectric layer, a leakage current density of 0.25 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda23452bae08c10040622f5341e9b37
https://doi.org/10.1016/j.sse.2020.107881
https://doi.org/10.1016/j.sse.2020.107881
Autor:
Ling Ju, Animesh Kundu, Alexandra J. Howzen, Jonathan J. Wierer, Nelson Tansu, Nicholas C. Strandwitz, Justin C. Goodrich, Thomas G. Farinha, Onoriode N. Ogidi-Ekoko
Publikováno v:
Journal of Crystal Growth. 536:125568
We report on the structural properties of MgO films deposited on GaN templates on sapphire substrates via atomic layer deposition (ALD). Analysis of the crystal quality and structure as a function of surface treatment and growth temperature are prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4145d2bac39d0c062041d6bda07d6ad
https://doi.org/10.1016/j.jcrysgro.2020.125568
https://doi.org/10.1016/j.jcrysgro.2020.125568