Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices

Autor: Jie Shen, Sebastian Heedt, Francesco Borsoi, Kevin van Hoogdalem, Nick van Loo, Alexandra Fursina, Ghada Badawy, Nick de Jong, May An Y. van de Poll, Mark Ammerlaan, Marina Quintero-Pérez, Sasa Gazibegovic, G. P. Mazur, Erik P. A. M. Bakkers, Pavel Aseev, Leo P. Kouwenhoven, Svetlana Korneychuk, Kongyi Li, Michał P. Nowak

Publikováno v: Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Nature Communications, 12(1)
Nature Communications

The realization of hybrid superconductor–semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0a1653c3750b35c7fc02ca494124d21
https://doaj.org/article/4342ea1879844c8391fb3d3c53b33006

Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks

Autor: Sara Martí-Sánchez, Sebastian Heedt, Peter Krogstrup, Alexandra Fursina, Timm Swoboda, Leo P. Kouwenhoven, Francesco Borsoi, Pavel Aseev, Jordi Arbiol, Joachim E. Sestoft, Luca Binci, R. Koops, Guanzhong Wang, Emanuele Uccelli, Filip Krizek, Frenk Boekhout, Philippe Caroff

Publikováno v: Nano Letters, 1, 19, 218-227
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters
Aseev, P, Fursina, A, Boekhout, F, Krizek, F, Sestoft, J E, Borsoi, F, Heedt, S, Wang, G, Binci, L, Marti-Sanchez, S, Swoboda, T, Koops, R, Uccelli, E, Arbiol, J, Krogstrup, P, Kouwenhoven, L P & Caroff, P 2019, ' Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks ', Nano Letters, vol. 19, no. 1, pp. 218-227 . https://doi.org/10.1021/acs.nanolett.8b03733
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19(1)

Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window res

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110d9841086fd09bf73bec464f975344
http://resolver.tudelft.nl/uuid:b64f439a-9ef2-413c-9033-66601d7fd295

Electropolymerization of Poly(phenylene oxide) on Graphene as a Top-Gate Dielectric

Autor: Timothy H. Vo, Alexandra Fursina, Jody Redepenning, Alexander Sinitskii, Alexey Lipatov, Benjamin B. Wymore

Publikováno v: Chemistry of Materials. 27:157-165

Site-directed electrochemical deposition of pinhole free, low-κ dielectric thin films on graphene is described for the first time. Specifically, we demonstrate the heterogeneous electrochemical polymerization of phenol to form thin (3–4 nm) layers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3357b221c7e3ff0e12c7afddab6df5a6
https://doi.org/10.1021/cm503688p

Kinetics of Diazonium Functionalization of Chemically Converted Graphene Nanoribbons

Autor: James M. Tour, Alexander Sinitskii, David A. Corley, Ayrat M. Dimiev, Dmitry V. Kosynkin, Alexandra Fursina

Publikováno v: ACS Nano. 4:1949-1954

We demonstrate that graphene nanoribbons (GNRs) produced by the oxidative unzipping of carbon nanotubes can be chemically functionalized by diazonium salts. We show that functional groups form a thin layer on a GNR and modify its electrical propertie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1fccbd40062318e572b40ddab2691aa
https://doi.org/10.1021/nn901899j

Statistical distribution of the electric field driven switching of the Verwey state in Fe3O4

Autor: R. G. S. Sofin, Alexandra Fursina, Igor V. Shvets, Douglas Natelson

The insulating state of magnetite (Fe$_{3}$O$_{4}$) can be disrupted by a sufficiently large dc electric field. Pulsed measurements are used to examine the kinetics of this transition. Histograms of the switching voltage show a transition width that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9dbcef093750e3a20f567969c2e99522