Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alexandra A. Muravyeva"'
Autor:
Michael S. Afanasiev, Alexey V. Bespalov, Andrey A. Geraskin, Olga L. Golykova, Dmitry V. Kulikov, Alexandra A. Muravyeva, Dmitry O. Smirnov, Igor A. Kharitonov, Ruslan S. Shabardin
Publikováno v:
Безопасность информационных технологий, Vol 30, Iss 3, Pp 116-125 (2023)
The process of recrystallization occurring at temperature of +80°C in aluminum (Al) conductors of integrated circuits (IC) designed to operate in the range -40°C -+60°C has been studied experimentally by the method of cross sections obtained with
Externí odkaz:
https://doaj.org/article/ce988462bf164b86aa6d445305614a4b
Autor:
Alexey V. Bespalov, Mikhail S. Afanasyev, Olga L. Golikova, Igor A. Kharitonov, Alexandra A. Muravyeva
Publikováno v:
Безопасность информационных технологий, Vol 30, Iss 2, Pp 151-162 (2023)
The process of Al diffusion into silicon substrate of an integrated circuit is studied experimentally and theoretically in details in order to analyze the invariance of the diffusion mechanism according to the Arrhenius law. During the process of pra
Externí odkaz:
https://doaj.org/article/6bfd1b779dbb406d9c08f58ac48c165c