Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Alexandr V, Kalinkin"'
Autor:
Evgeniy V, Korotaev, Mikhail M, Syrokvashin, Irina Yu, Filatova, Aleksandr V, Sotnikov, Alexandr V, Kalinkin
Publikováno v:
Materials (Basel, Switzerland). 15(24)
The charge distribution study of metal atoms in CuCr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b08c1484d9b87666cf2a7fdfa571a21e
https://pubmed.ncbi.nlm.nih.gov/36556553
https://pubmed.ncbi.nlm.nih.gov/36556553
Autor:
Evgeniy V. Korotaev, Mikhail M. Syrokvashin, Irina Yu. Filatova, Aleksandr V. Sotnikov, Alexandr V. Kalinkin
Publikováno v:
Materials; Volume 16; Issue 6; Pages: 2431
The atom oxidation states were determined using the binding energies of the core S2p-, Cu2p-, Cr2p-, and Ln3d-levels in CuCr0.99Ln0.01S2 (Ln = Dy–Lu) solid solutions. The charge distribution on the matrix elements (Cu, Cr, and S) remained unaffecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f67af8b412ce94c12a7d603896141fcf
https://doi.org/10.3390/ma16062431
https://doi.org/10.3390/ma16062431
Autor:
Evgeniy V. Korotaev, Mikhail M. Syrokvashin, Irina Yu. Filatova, Aleksandr V. Sotnikov, Alexandr V. Kalinkin
Publikováno v:
Materials; Volume 15; Issue 24; Pages: 8747
The charge distribution study of metal atoms in CuCr0.99Ln0.01S2 (Ln = Pr–Tb) solid solutions was carried out using X-ray photoelectron spectroscopy (XPS). The analysis of the binding energy of S2p, Cu2p, Cr2p, Ln3d and Ln4d levels allows one to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::397de7867b6c4fc340e18582237153d7
https://doi.org/10.3390/ma15248747
https://doi.org/10.3390/ma15248747
Autor:
M. S. Aksenov, Igor P. Prosvirin, Mikhail A. Putyato, Oleg E. Tereshchenko, Alexandr V. Kalinkin, N. A. Valisheva, V. A. Golyashov, Valery V. Preobrazhensky, B. R. Semyagin
Publikováno v:
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.
Composition and electrical characteristics of HfO 2 /Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO 2 ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO 2 on Si-passivated GaAs(001) sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63acc8946a1d1d7eb1a26bc32f4b2af5
https://doi.org/10.1109/edm.2011.6006887
https://doi.org/10.1109/edm.2011.6006887