Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Alexandr Dobrovolsky"'
Autor:
A. I. Artamkin, Vasily V. Bel'kov, V. P. Zlomanov, A. A. Vinokurov, Sergey Danilov, Ludmila I. Ryabova, Alexandr Dobrovolsky, Dmitry Khokhlov
Publikováno v:
Semiconductors. 47:319-322
It is shown that PbTe:V single crystals are photosensitive in the terahertz spectral region up to the wavelength 280 μm. The measurements are conducted in the temperature range from 8 to 300 K. In this temperature range, the dark conductivity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb84ec7b0378d2c48b7a587e0b9095f7
https://doi.org/10.1134/s1063782613030032
https://doi.org/10.1134/s1063782613030032
Autor:
K. A. Drozdov, Dmitry Khokhlov, A. V. Babynina, Roman B. Vasiliev, V. I. Kochnev, Marina Rumyantseva, Alexander Gaskov, Ludmila I. Ryabova, Alexandr Dobrovolsky
Publikováno v:
Semiconductors. 47:383-386
The introduction of CdSe nanocrystals (colloidal quantum dots) into a porous SnO2 matrix brings about the appearance of photoconductivity in the structures. Sensitization is a consequence of charge exchange between the quantum dots and the matrix. Ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827c65ffc9700f70f9cb053c03690651
https://doi.org/10.1134/s106378261303007x
https://doi.org/10.1134/s106378261303007x
Autor:
Vasily V. Bel'kov, Alexandr Dobrovolsky, Dmitry Khokhlov, Ludmila I. Ryabova, V. I. Chernichkin, V. Kasiyan, Zinovy Dashevsky, Sergey Ganichev, S. N. Danilov
Publikováno v:
Semiconductors. 45:1474-1478
It is shown that the microstructure and features of formation of surface states in nanocrystalline and polycrystalline PbTe:In films most significantly affect the character of photoconductivity in the spectral range of 1–2.5 THz. We present the res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6dc21874fe23ef6663ce3d3eacd9a2
https://doi.org/10.1134/s1063782611110091
https://doi.org/10.1134/s1063782611110091
Autor:
O. M. Ivanenko, Dmitry Khokhlov, A. I. Artamkin, K. V. Mitzen, V. P. Zlomanov, Alexandr Dobrovolsky, Ludmila I. Ryabova, S. Y. Gavrilkin, A. A. Vinokurov
Publikováno v:
Semiconductors. 44:1543-1547
Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9a89352183abab8be33fcab74441ec8
https://doi.org/10.1134/s106378261012002x
https://doi.org/10.1134/s106378261012002x
Autor:
Dmitry Khokhlov, K. A. Drozdov, Marina Rumyantseva, Ludmila I. Ryabova, Roman B. Vasiliev, Alexander Gaskov, Alexandr Dobrovolsky, Olga Maslova
Publikováno v:
physica status solidi c. 7:972-975
Microstructure, optical and photoelectric properties of nanocrystalline porous SnO2 films on an insulating substrate with colloidal CdSe quantum dots as a sensitizer have been studied. SnO2 films consist of nanocrystallites with the average size of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2151c41fc0172147ff46b2871b47b532
https://doi.org/10.1002/pssc.200982715
https://doi.org/10.1002/pssc.200982715
Autor:
V. Kasiyan, Zinovi Dashevsky, V. I. Chernichkin, Alexandr Dobrovolsky, Dmitry Khokhlov, Ludmila I. Ryabova, I. A. Belogorokhov
Publikováno v:
physica status solidi c. 7:869-872
Microstructure, charge transport and photoelectric properties are studied for PbTe(In) films deposited on amorphous substrates kept at different temperatures Ts during deposition. All the films have a column-like structure with the mean column diamet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1347311c2a26b2b54357d26f3190317
https://doi.org/10.1002/pssc.200982714
https://doi.org/10.1002/pssc.200982714
Autor:
Alexander Gaskov, Alexandr Dobrovolsky, L. Calvo, A.A. Zhukova, Marina Rumyantseva, V.B. Zaytsev
Publikováno v:
Journal of Crystal Growth. 312:386-390
Single crystalline antimony-doped SnO 2 whiskers (0.025–0.25 at% Sb) have been synthesized by in situ doping process in horizontal flow reactor. Antimony introduction results in whisker morphology change. Antimony allows to control the resistivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c911bea209f892ff85d4a4d7080c09a
https://doi.org/10.1016/j.jcrysgro.2009.11.022
https://doi.org/10.1016/j.jcrysgro.2009.11.022
Autor:
V. A. Kassiyan, T. A. Komissarova, B. A. Akimov, Ludmila I. Ryabova, Alexandr Dobrovolsky, Dmitry Khokhlov, Zinovy Dashevsky
Publikováno v:
Semiconductors. 43:253-256
Temperature and frequency dependences of components of complex impedance for nanocrystalline PbTe:In films in the temperature range of 4.2–300 K and the frequency range from 20 Hz to 1 MHz have been studied. The films were deposited onto a cooled g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9893faae103dd8dce5a0eda8821bbad2
https://doi.org/10.1134/s1063782609020249
https://doi.org/10.1134/s1063782609020249
Autor:
Weimin Chen, Bong-Joong Kim, Y. J. Kuang, Charles W. Tu, Alexandr Dobrovolsky, Won-Mo Kang, Irina Buyanova, Ja-Soon Jang, S. Sukrittanon
We have demonstrated self-catalyzed GaN xP1−x and GaN xP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaN xP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c178c64399d7645abddea570f641f69f
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109928
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109928
Autor:
Zinovy Dashevsky, Alexandr Dobrovolsky, T. A. Komissarova, B. A. Akimov, V. Kasiyan, Ludmila I. Ryabova, Dmitry Khokhlov
Publikováno v:
International Journal of Materials Research. 100:1252-1254
Frequency and temperature dependences of the impedance components have been investigated in darkness and under illumination for PbTe(In) nanocrystalline films. Synthesis of the films was performed using evaporation of a target source to a cooled glas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec0a854c765a012797fbf85c96a687e5
https://doi.org/10.3139/146.110183
https://doi.org/10.3139/146.110183