Zobrazeno 1 - 10
of 419
pro vyhledávání: '"Alexander Y. Polyakov"'
Autor:
Alexander Y. Polyakov, Eugene B. Yakimov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Andrej V. Miakonkikh, Alexander Azarov, In-Hwan Lee, Anton A. Vasilev, Anastasiia I. Kochkova, Ivan V. Shchemerov, Andrej Kuznetsov, Stephen J. Pearton
Publikováno v:
Crystals, Vol 13, Iss 9, p 1400 (2023)
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor compl
Externí odkaz:
https://doaj.org/article/86f41d6f923e407ea9ebcca20a4c85fd
Autor:
Eugene B. Yakimov, Alexander Y. Polyakov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Mikhail P. Scheglov, Eugene E. Yakimov, Stephen J. Pearton
Publikováno v:
Nanomaterials, Vol 13, Iss 7, p 1214 (2023)
In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensiona
Externí odkaz:
https://doaj.org/article/2df1d68f47d8404f8f750310d3147686
Autor:
Elina A. Tastekova, Alexander Y. Polyakov, Anastasia E. Goldt, Alexander V. Sidorov, Alexandra A. Oshmyanskaya, Irina V. Sukhorukova, Dmitry V. Shtansky, Wolgang Grünert, Anastasia V. Grigorieva
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 880-889 (2018)
Mesoporous silver nanoparticles were easily synthesized through the bulk reduction of crystalline silver(I) oxide and used for the preparation of highly porous surface-enhanced Raman scattering (SERS)-active substrates. An analogous procedure was suc
Externí odkaz:
https://doaj.org/article/9c9e2099931940e7acee790f0cb372d6
Autor:
Maksim I. Paukov, Anastasia E. Goldt, Gennady A. Komandin, Alexander V. Syuy, Dmitriy I. Yakubovskiy, Alexander Y. Polyakov, Reshef Tenne, Alla Zak, Sergey Novikov, Albert G. Nasibulin, Alexey V. Arsenin, Valentin Volkov, Maria G. Burdanova
Publikováno v:
2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09b38d9fb517ec3cb39872ec53f83fd6
https://doi.org/10.1109/sum53465.2022.9858252
https://doi.org/10.1109/sum53465.2022.9858252
Autor:
Alexander Y. Polyakov, V Nikolaev, A Pechnikov, E Yakimov, S kARPOV, S Stepanov, I Shchemerov, A Vasilev, A Chernyk, A Kuznetsov, In-Hwan Lee, Stephen Pearton
Publikováno v:
Journal of Alloys and Compounds. 936:168315
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::347eecc475449581dcdb8dde75feb3e5
https://doi.org/10.1016/j.jallcom.2022.168315
https://doi.org/10.1016/j.jallcom.2022.168315
Publikováno v:
Applied Sciences, Vol 8, Iss 9, p 1574 (2018)
We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars w
Externí odkaz:
https://doaj.org/article/d87912eb394144bab48f7427a3b2a243
Autor:
Alexander L. Dubov, Eugene A. Goodilin, T.A. Sorkina, I. A. Presnyakov, I. I. Selezneva, Alexander Y. Polyakov, Y.V. Maximov, Anastasia E. Goldt, N.Y. Polyakova, G.A. Davidova, Irina V. Perminova
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 10:184-189
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec6a0ecf120f723a67dbffc4f4f2f538
https://doi.org/10.17586/2220-8054-2019-10-2-184-189
https://doi.org/10.17586/2220-8054-2019-10-2-184-189
Autor:
Eugene B. Yakimov, Taehwan Kim, P. S. Vergeles, In Hwan Lee, V. I. Orlov, Alexander Y. Polyakov
Publikováno v:
Journal of Alloys and Compounds. 776:181-186
The recombination and optical properties of dislocations in GaN introduced at room temperature by applied stress have been studied. It is observed that under the application of local shear stress of a few tens of MPa the dislocation glide in the para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e4144788a1668f47cbfb5b96f38396
https://doi.org/10.1016/j.jallcom.2018.10.280
https://doi.org/10.1016/j.jallcom.2018.10.280
Autor:
Jihyun Kim, Fan Ren, Alexander Y. Polyakov, Stephen J. Pearton, Jiancheng Yang, Chaker Fares, Suhyun Kim
Publikováno v:
Journal of Materials Chemistry C. 7:10-24
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c89d8ed79c5e02a9d09503510dd8ab40
https://doi.org/10.1039/c8tc04193h
https://doi.org/10.1039/c8tc04193h
Autor:
Eugene B. Yakimov, Fan Ren, S. J. Pearton, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, Ivan Shchemerov, Alexander Y. Polyakov, Daniela Gogova
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3019-Q3023
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97026c9f27badd469abbbf79cc86051
https://doi.org/10.1149/2.0041907jss
https://doi.org/10.1149/2.0041907jss