Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Alexander W. Fang"'
Autor:
Ling Liao, Hyundai Park, Alexander W. Fang, Brian R. Koch, Hui-Wen Chen, Richard Jones, Di Liang, Matthew N. Sysak, John E. Bowers, Jock Bovington, Matt Jacob-Mitos, Kristi Wong, Yongbo Tang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:671-688
The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. La
Autor:
Nick McKeown, Neda Beheshti, John M. Garcia, Henrik N. Poulsen, John E. Bowers, Kimchau N. Nguyen, Yashar Ganjali, M.M. Dummer, Brian R. Koch, Matthew N. Sysak, Jonathon S. Barton, Daniel J. Blumenthal, Emily F. Burmeister, Erica Lively, Milan L. Mašanović, John P. Mack, Steven C. Nicholes, Vikrant Lal, Alexander W. Fang, Larry A. Coldren, Hyundai Park, Anna Tauke-Pedretti, Biljana Stamenic, G. Epps
Publikováno v:
Blumenthal, Daniel J.; Barton, John; Beheshti, Neda; Bowers, John E.; Burmeister, Emily; Coldren, Larry; et al.(2011). Integrated Photonics for Low-Power Packet Networking. IEEE Journal of Selected Topics in Quantum Electronics, 17(2), 458-471. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/1k2158rb
Communications interconnects and networks will continue to play a large role in contributing to the global carbon footprint, especially in data center and cloud-computing applications exponential growth in capacity. Key to maximizing the benefits of
Autor:
Di Liang, Jon D. Peters, Zhi Wang, Jock Bovington, Alexander W. Fang, John E. Bowers, Hui-Wen Chen
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 58:3213-3219
A hybrid silicon photonic integrated filter is proposed and demonstrated with a novel structure. This filter incorporates a ring resonator in one arm of a Mach-Zehnder interferometer making it possible to obtain a programmable filter response. The op
Publikováno v:
ECS Transactions. 33:421-426
Enhanced III-V epitaxial transfer through a low-temperature direct wafer bonding process was observed by including a strained superlattice (SSL) layer right above the bonding layer in III-V to block bonding-induced defects. Compared to previously-use
Autor:
Gunther Roelkens, Richard Jones, Alexander W. Fang, Di Liang, John E. Bowers, Liu Liu, Brian R. Koch
Publikováno v:
Laser & Photonics Reviews. 4:751-779
In this paper III-V on silicon-on-insulator (SOI) het- erogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter-chip and intra-chip optical interconnects. Two bonding te
Autor:
Erica Lively, Brian R. Koch, Richard Jones, John E. Bowers, Alexander W. Fang, Di Liang, Ying-Hao Kuo, Matthew N. Sysak, Omri Raday
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:535-544
The silicon evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon evanescent lasers that uti
Autor:
Richard Jones, Daniel J. Blumenthal, Erica Lively, Brian R. Koch, Alexander W. Fang, John E. Bowers, Oded Cohen
Publikováno v:
Laser & Photonics Reviews. 3:355-369
Electrically pumped lasers that can be made on sili- con and integrated with other components are important in order to take full advantage of the capabilities of silicon photonics. In this paper we review two specific types of hybrid silicon evanes-
Autor:
Hyundai Park, Hsu-Hao Chang, Di Liang, Richard Jones, Alexander W. Fang, Matthew N. Sysak, Ying-Hao Kuo, Brian R. Koch, John E. Bowers, Hui-Wen Chen
Publikováno v:
Advances in Optical Technologies. 2008:1-17
This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achiev
Autor:
Tom E. Reynolds, Douglas C. Oakley, K. Warner, Alexander W. Fang, John E. Bowers, Di Liang, Hyundai Park
Publikováno v:
Journal of Electronic Materials. 37:1552-1559
We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capabi
Autor:
Hyundai Park, Mario J. Paniccia, Alexander W. Fang, John E. Bowers, Oded Cohen, Richard Jones, Omri Raday
Publikováno v:
Journal of Materials Science: Materials in Electronics. 20:3-9
An overview is presented of the hybrid AlGaInAs-silicon platform that enables wafer level integration of III-V optoelectronic devices with silicon photonic devices based on silicon-on-insulator (SOI). Wafer bonding AlGaInAs quantum wells to an SOI wa