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pro vyhledávání: '"Alexander V. Myasoedov"'
Autor:
Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Alexander E. Kalmykov, Olga P. Kazarova, Evgeniy N. Mokhov, Kristina N. Mikaelyan, Alexander V. Myasoedov, Lev M. Sorokin, Kirill D. Shcherbachev
Publikováno v:
Crystals, Vol 7, Iss 6, p 163 (2017)
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective.
Externí odkaz:
https://doaj.org/article/a1b85bf43fe349259e80f98fb313d9d1
