Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alexander V. Mazurov"'
Publikováno v:
SPIE Proceedings.
The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. Electrical model describing current-voltage characteristics of heterostructure in wide range of forward biases was dev
Publikováno v:
Materials for Infrared Detectors II.
The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. The investigation of spectral characteristics of a-SiGe:H/c-Si heterostructure in the wavelength range from 500 to 110