Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Alexander V, Rumyantsev"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 733-742 (2024)
The evolution of a multilayer sample surface during focused ion beam processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into
Externí odkaz:
https://doaj.org/article/1141814ba2a649f9b28e3c3b6938ddb4
Autor:
Katerina V, Tishakova, Dmitry Yu, Prokopov, Guzel I, Davletshina, Alexander V, Rumyantsev, Patricia C M, O'Brien, Malcolm A, Ferguson-Smith, Massimo, Giovannotti, Artem P, Lisachov, Vladimir A, Trifonov
Publikováno v:
International journal of molecular sciences. 23(24)
The veiled chameleon (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7a700c8dfcef820179639bb48f6d2dd6
https://pubmed.ncbi.nlm.nih.gov/36555478
https://pubmed.ncbi.nlm.nih.gov/36555478
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:956-960
—The atomic structure of crystalline silicon after 5-keV gallium-ion bombardment is investigated using experimental cross-sectional transmission electron microscopy imaging of the irradiated area. Atomistic molecular-dynamics simulations are perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb64f9802a24869b4dba9e04f3bb16b
https://doi.org/10.1134/s1027451020050171
https://doi.org/10.1134/s1027451020050171
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:607-612
The processes of redeposited and crystalline silicon sputtering under focused Ga ion-beam irradiation are simulated using the Monte Carlo method and different models of the surface binding energy of Si and Ga atoms. The sputtering yields and the prof
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383c2d26bd0cb54a484273dec62bbc56
https://doi.org/10.1134/s1027451018030345
https://doi.org/10.1134/s1027451018030345
Publikováno v:
Applied Surface Science. 540:148278
Application of ion beams in modern technology requires quantifying disorder induced by the collisions of energetic species and substrate atoms. For studying the structure of the transition region between crystalline silicon and amorphous layer Si(0 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd81ef13e65194187180294ab7f73c6
https://doi.org/10.1016/j.apsusc.2020.148278
https://doi.org/10.1016/j.apsusc.2020.148278
Publikováno v:
Technical Physics Letters. 41:610-613
The evolution of the surface of a sample under the action of a focused ion beam (FIB) has been simulated using the level set method in the framework of a model that takes into account the redeposition of atoms primarily sputtered by the incident ions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed545c65c3632a48820514560fb9c226
https://doi.org/10.1134/s106378501506019x
https://doi.org/10.1134/s106378501506019x
Publikováno v:
Journal of Vacuum Science & Technology B. 36:061802
Successful implementation of focused ion beam technologies in fabrication of practically important structures, including circular holes and trenches requires evaluating the ion dose delivered to the specimen by the beam and subsequently predicting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96d2e64c30cfbd7b38d575777feac72
https://doi.org/10.1116/1.5047107
https://doi.org/10.1116/1.5047107
Publikováno v:
Materials Research Express. 5:025905
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b352f9d02b19f7c7f025be790c86fe4
https://doi.org/10.1088/2053-1591/aaace1
https://doi.org/10.1088/2053-1591/aaace1
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:061803
For applying focused ion beam technologies in fabrication of the predetermined structures it is essential to evaluate the ion dose delivered to the specimen by the beam and on this basis to predict the formed topography. In this article the authors o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4786db0cb7eb6b0c3f7d738e89ac74
https://doi.org/10.1116/1.4967249
https://doi.org/10.1116/1.4967249
Publikováno v:
Materials Research Express; Feb2018, Vol. 5 Issue 2, p1-1, 1p