Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Alexander Trapp"'
Autor:
Thomas Riedl, Vinay S. Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter, Jörg K. N. Lindner
Publikováno v:
Advanced Materials Interfaces, Vol 9, Iss 11, Pp n/a-n/a (2022)
Abstract The size‐dependent strain relaxation in InAs quantum dots on the top face of GaAs(111)A nanopillars is studied experimentally by scanning transmission electron microscopy (STEM) and theoretically using molecular static simulations. In the
Externí odkaz:
https://doaj.org/article/f479fc69c21f4c8c835a45c2a85fb427
Publikováno v:
Journal of Crystal Growth. 512:164-168
Here we present a study of the solid source molecular beam epitaxy growth of carbon doped GaAs(1 1 1)B oriented layers in a wide doping concentration range from 10 16 to 10 20 cm - 3 . The layers have been fabricated on GaAs(1 1 1)B substrates with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d776537b42ae4190694112998daadbe7
https://doi.org/10.1016/j.jcrysgro.2019.02.006
https://doi.org/10.1016/j.jcrysgro.2019.02.006
Autor:
Michal Kobecki, Alexey V. Scherbakov, Serhii M. Kukhtaruk, Dmytro D. Yaremkevich, Tobias Henksmeier, Alexander Trapp, Dirk Reuter, Vitalyi E. Gusev, Andrey V. Akimov, Manfred Bayer
The functionality of phonon-based quantum devices largely depends on the efficiency of interaction of phonons with other excitations. For phonon frequencies above 20 GHz, generation and detection of the phonon quanta can be monitored through photons.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54ad31f915a04ebde9371631fa3536ff
Autor:
Vinay Kunnathully, Jörg K. N. Lindner, Dirk Reuter, Thomas Riedl, Timo Langer, Alexander Trapp
Publikováno v:
Physical Review Materials. 4
We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3053762b36cab924549874064b236067
https://doi.org/10.1103/physrevmaterials.4.014602
https://doi.org/10.1103/physrevmaterials.4.014602
Autor:
Dirk Reuter, Alexander Trapp
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:02D106
Self-assembled GaAs quantum dots (QDs) have been grown on misoriented GaAs(111)B substrates using droplet epitaxy. Different droplet deposition temperatures, arsenization temperatures and times as well as postcrystallization annealing temperatures ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4ae3bbcb7cbb3601a09a6cac2d408f
https://doi.org/10.1116/1.5012957
https://doi.org/10.1116/1.5012957