Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alexander Timothy Bean"'
Publikováno v:
SPIE Proceedings.
As the semiconductor industry continues to strive towards high volume manufacturing for EUV, flatness specifications for photomasks have decreased to below 10nm for 2018 production, however the current champion masks being produced report P-V flatnes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55da5579c658bc3e8e616e07a1a2f1c8
https://doi.org/10.1117/12.2240956
https://doi.org/10.1117/12.2240956
Publikováno v:
SPIE Proceedings.
Due to the impact on image placement and overlay errors inherent in all reflective lithography systems, EUV reticles will need to adhere to flatness specifications below 10nm for 2018 production. These single value metrics are near impossible to meet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103fae21a1cdf2c45fcdfc699bf21712
https://doi.org/10.1117/12.2242282
https://doi.org/10.1117/12.2242282