Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Alexander S. Rodin"'
Proton- and Neutron-Induced SEU Cross-Section Modeling and Simulation: A Unified Analytical Approach
Autor:
Gennady I. Zebrev, Nikolay N. Samotaev, Rustem G. Useinov, Artur M. Galimov, Vladimir V. Emeliyanov, Artyom A. Sharapov, Dmitri A. Kazyakin, Alexander S. Rodin
Publikováno v:
Radiation, Vol 4, Iss 1, Pp 37-49 (2024)
A new physics-based compact model, which makes it possible to simulate in a unified way the neutrons and protons of cosmic ray-induced SEU cross-sections, including the effects from nuclear reaction products and from direct ionization by low-energy p
Externí odkaz:
https://doaj.org/article/9d0bfed7d313493dbcb23cb4dbe73ed5
Testing for Enhanced Low Dose Rate Sensitivity and Reduced Low Dose Rate Sensitivity Bipolar Devices
Autor:
V. A. Telets, Alexander S. Bakerenkov, Alexander S. Rodin, A. I. Zhukov, Vladimir V. Belyakov, I. D. Kovsharov, V A Felitsyn, V.S. Pershenkov
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc69c9227270a4d577d9a16e1c4725a
https://doi.org/10.1109/miel52794.2021.9569132
https://doi.org/10.1109/miel52794.2021.9569132
Autor:
Alexander S. Bakerenkov, A. I. Zhukov, Viacheslav S. Pershenkov, V A Felitsyn, Alexander S. Rodin
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
Dependences of LM 111 voltage comparator input current on time during post-radiation annealing are investigated. The technique based on the Gummel- Poon model of a bipolar transistor for numerical simulation of the annealing process, taking into acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a46835da7e49a2dc5767e830593b9a9f
https://doi.org/10.1109/miel52794.2021.9569089
https://doi.org/10.1109/miel52794.2021.9569089
Autor:
Viacheslav S. Pershenkov, Alexander S. Bakerenkov, Vitaliy A. Telets, V A Felitsyn, Vladimir V. Belyakov, Alexander S. Rodin
Publikováno v:
Radiation Effects and Defects in Solids. 174:320-328
The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ac1cedc0d941a4e66057210a819760
https://doi.org/10.1080/10420150.2018.1564921
https://doi.org/10.1080/10420150.2018.1564921
Autor:
V. A. Telets, A. I. Zhukov, Alexander S. Rodin, Vladimir V. Belyakov, Alexander S. Bakerenkov, Viacheslav S. Pershenkov, V A Felitsyn, Nikita S. Glukhov
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6a951c83716fff3387f0458f6dee36
https://doi.org/10.1109/redw51883.2020.9325848
https://doi.org/10.1109/redw51883.2020.9325848
Autor:
Alexander V. Plekhanov, Konstantin D. Golovkin, Alexander S. Rodin, Evgeniy S. Yushkov, Vladimir Vladimirovich Lukin
Publikováno v:
IEEE Transactions on Plasma Science. 46:967-971
One of the ways to decrease electromagnetic rail launcher (EMRL) barrel mass is to utilize composite material overwrap. Design of novel light, stiff, and durable EMRLs requires accurate computational prediction of barrel strength. This paper presents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6bfc0a9cb6fd8fb2f869161c2ee9b6
https://doi.org/10.1109/tps.2018.2804442
https://doi.org/10.1109/tps.2018.2804442
Autor:
V.V. Shurenkov, Viacheslav S. Pershenkov, Vladimir V. Belyakov, V. A. Telets, Alexander S. Rodin, Viktor N. Ulimov, V. A. Felytsyn, Aleksandr S. Petrov, Alexander S. Bakerenkov
Publikováno v:
Microelectronics Reliability. :703-707
Physical mechanism of enhanced low dose rate sensitivity effect in bipolar devices is observed. It is shown, that the accumulation of the defects during low dose rate irradiation depends on the irradiation time only, while true dose rate effects cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9c005c48839010ddab68cda4b48d44
https://doi.org/10.1016/j.microrel.2017.07.025
https://doi.org/10.1016/j.microrel.2017.07.025
Autor:
Alexander S. Bakerenkov, Viacheslav S. Pershenkov, V A Felitsyn, V. A. Telets, Alexander S. Rodin, Vladimir V. Belyakov
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10d5578238c773fb3c9a152d3411d6d
https://doi.org/10.1007/978-3-030-31866-6_13
https://doi.org/10.1007/978-3-030-31866-6_13
Autor:
V. A. Telets, Alexander S. Rodin, V A Felitsyn, Alexander S. Bakerenkov, Viacheslav S. Pershenkov
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
Real time dependence of operation temperature, which is typical for space environment, was taken into account in the numerical simulation of radiation degradation of LM111 bipolar voltage comparator input current. The technique and results of perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c132af9e1555e035855bbe396b0de83
https://doi.org/10.1007/978-3-030-31866-6_143
https://doi.org/10.1007/978-3-030-31866-6_143
Autor:
B. Podlepetsky, Alexander S. Rodin, Viacheslav S. Pershenkov, V A Felitsyn, Vladimir V. Belyakov, Alexander S. Bakerenkov
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d29902e2d5a563b0377f7130511626
https://doi.org/10.1007/978-3-030-31866-6_73
https://doi.org/10.1007/978-3-030-31866-6_73