Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alexander S. Grashchenko"'
Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms
Publikováno v:
Catalysis Today. :375-378
A modified technique for the growth of silicon carbide from silicon by the method of self-consistent substitution of atoms is proposed, which makes it possible to increase the achievable thickness of the formed silicon carbide layer by about an order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d91b7e09eed894d372603b3faccecab
https://doi.org/10.1016/j.cattod.2021.08.012
https://doi.org/10.1016/j.cattod.2021.08.012
Autor:
Sviatets, Sergey A. Kukushkin, Lev K. Markov, Alexey S. Pavlyuchenko, Irina P. Smirnova, Andrey V. Osipov, Alexander S. Grashchenko, Andrey E. Nikolaev, Alexey V. Sakharov, Andrey F. Tsatsulnikov, Genadii V.
Publikováno v:
Coatings; Volume 13; Issue 7; Pages: 1142
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::a4a345f082c38ff2bf09116fc374540f