Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Alexander Kloes"'
Autor:
Ghader Darbandy, Elahe Rastegar Pashaki, Christian Roemer, Amric Bonil, Juan Wang, Benjamin Iniguez, Hans Kleemann, Alexander Kloes
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In state‐of‐the‐art organic transistors, the transit frequency fT is reported to be fT = 40 MHz for vertical organic transistors, where a voltage‐normalized fT corresponds to 0.36 MHz V−2. The reported highest fT for conventional o
Externí odkaz:
https://doaj.org/article/54523743cb2c49058cd59d3382e4f246
Autor:
Alexander Kloes, Jakob Leise, Jakob Pruefer, Aristeidis Nikolaou, Benjamin Iniguez, Thomas Gneiting, Hagen Klauk, Ghader Darbandy
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 734-743 (2023)
This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves a
Externí odkaz:
https://doaj.org/article/73e8e5fdd25f469fbb1a443d6d063d44
Autor:
Malte Koch, Hsin Tseng, Anton Weissbach, Benjamin Iniguez, Karl Leo, Alexander Kloes, Hans Kleemann, Ghader Darbandy
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 665-671 (2023)
In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltz
Externí odkaz:
https://doaj.org/article/2035bca101db4847954b643c9314f4b2
Autor:
Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 416-423 (2022)
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injec
Externí odkaz:
https://doaj.org/article/e7a6752fe9fb43a7b35b54c1a5d279c7
Autor:
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 450-455 (2021)
An accurate and efficient noise-based simulation technique for predicting the impact of device-parameter variability on the DC statistical behavior of integrated circuits is presented. The proposed method is validated on a source follower, a diode-lo
Externí odkaz:
https://doaj.org/article/3ecabaede6334deebb278a04510a21fd
Autor:
Benjamin Iniguez, Arokia Nathan, Alexander Kloes, Yvan Bonnassieux, Krunoslav Romanjek, Micael Charbonneau, Jan Laurens Van Der Steen, Gerwin Gelinck, Thomas Gneiting, Firas Mohamed, Gerard Ghibaudo, Antonio Cerdeira, Magali Estrada, Slobodan Mijalkovic, Ahmed Nejim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 911-932 (2021)
We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of
Externí odkaz:
https://doaj.org/article/ba9eaba32fe54dd5b385fa3261ec35c2
Autor:
Erjuan Guo, Zhongbin Wu, Ghader Darbandy, Shen Xing, Shu-Jen Wang, Alexander Tahn, Michael Göbel, Alexander Kloes, Karl Leo, Hans Kleemann
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
The development of vertical organic transistors with controllable threshold voltage is highly desirable for integrated circuit-based displays and sensors. Here, the authors report vertical organic permeable dual-based transistors with independently t
Externí odkaz:
https://doaj.org/article/16a49bbf52bb45059a5218985723e6df
Autor:
Jakob Leise, Jakob Pruefer, Ghader Darbandy, Masoud Seifaei, Yiannos Manoli, Hagen Klauk, Ute Zschieschang, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 396-406 (2020)
This journal paper introduces a charge-based approach for the calculation of charges and capacitances in staggered organic thin-film transistors (OTFTs). Based on an already existing DC model, the charges are yielded in an analytical and compact form
Externí odkaz:
https://doaj.org/article/9db9364071da489da8fc8cec54332ac2
Autor:
Shu-Jen Wang, Michael Sawatzki, Ghader Darbandy, Felix Talnack, Jörn Vahland, Marc Malfois, Alexander Kloes, Stefan Mannsfeld, Hans Kleemann, Karl Leo
Publikováno v:
Nature. 606:700-705
Devices made using thin-film semiconductors have attracted much interest recently owing to new application possibilities. Among materials systems suitable for thin-film electronics, organic semiconductors are of particular interest; their low cost, b
Autor:
Jakob Pruefer, Jakob Leise, James W. Borchert, Hagen Klauk, Ghader Darbandy, Aristeidis Nikolaou, Benjamin Iniguez, Thomas Gneiting, Alexander Kloes
Publikováno v:
IEEE Transactions on Electron Devices. 69:1099-1106