Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Alexander Kalnitsky"'
Autor:
Harry Yeh, P.W. Liu, H.W. Tseng, C.D. Hsieh, Jarcle Huang, W.T. Huang, B.Y. Chou, Allan Huang, Jack Liu, Chung-Hsien Lin, W.K. Chang, Chao-Hsin Chien, Yang Yu-Tao, S.K. Yang, Y.L. Hsu, Kevin Huang, Daniel Chang, Alexander Kalnitsky, Harry Chuang
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
This work presents an example of 16nm FinFET CMOS with an embedded flash 40nm memory employing Wafer-on-Wafer (WoW) technology. Our results show comparable embedded flash performance, CMOS logic speed and power consumption comparing corresponding cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a98a7dd66c018c5ab68ce6365bb1559
https://doi.org/10.1109/vlsitechnology18217.2020.9265049
https://doi.org/10.1109/vlsitechnology18217.2020.9265049
Autor:
Thomas Yang, Man-Ho Kwan, J. L. Yu, Alexander Kalnitsky, H. C. Tuan, Tom Tsai, Gaofei Tang, Lin You-Ru, Chan-Hong Chern, Fu-Wei Yao, Kevin J. Chen, Ru-Yi Su
Publikováno v:
IEEE Electron Device Letters. 39:1362-1365
The ${p}$ -GaN gate capacitors with a metal/ ${p}$ -GaN/AlGaN/GaN structure are demonstrated on an enhancement-mode (E-mode) GaN-on-Si power device platform. High capacitance density of >170 nF/cm2 is obtained with an operating voltage range of 0 ~ 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd50a7b82737c688c74b8e81b5e1a699
https://doi.org/10.1109/led.2018.2854407
https://doi.org/10.1109/led.2018.2854407
Autor:
Alexander Kalnitsky, Huang Shih-Fen, Benior Chen, Hu Fan, Terrence Yu, Sean Cheng, Leo Tsai, Lin Anderson, Victor Shih, Vincent Teng, Yeur-Luen Tu, Lin You-Ru, Huang Fu-Chun, Yi-Heng Tsai, Ching-Hui Lin, Julian Lee, Lee-Chuan Tseng, Chen Yen-Wen, Liao Yan-Jie, Ching-Hua Chiu, Kelvin Tai, Chih-Ming Chen, Chang Kai-Fung
Publikováno v:
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII).
This work presents the piezoelectric process technology developed in a high volume foundry for emerging MEMS applications. Innovative reliability enhancement techniques for piezoelectric devices are demonstrated to significantly boost (1) dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f098716254df2c0ea448bf9d70d0a65
https://doi.org/10.1109/transducers.2019.8808685
https://doi.org/10.1109/transducers.2019.8808685
Autor:
Ru-Yi Su, H. C. Tuan, Tom Tsai, Zhaofu Zhang, J. L. Yu, Gaofei Tang, Fu-Wei Yao, Chan-Hong Chern, Jiacheng Lei, Man-Ho Kwan, Thomas Yang, Lin You-Ru, Kevin J. Chen, Jiabei He, Alexander Kalnitsky
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201d6c63de1c9a5a11c212b708b09916
https://doi.org/10.1109/ispsd.2018.8393606
https://doi.org/10.1109/ispsd.2018.8393606
Autor:
Huang Shih-Fen, Chun-Cheng Lin, Ching-Hui Lin, Yi-Ren Huo, Duane S. Juang, Alexander Kalnitsky, Chia-Yu Tang, Chun-Ren Cheng, Hua-Shu Wu
Publikováno v:
Biosensorsbioelectronics. 117
Here we report an electrochemical immunoassay platform called Proton-ELISA (H-ELISA) for the detection of bioanalytes. H-ELISA uniquely utilizes protons as an immunoassay detection medium, generated by the enzyme glucose oxidase (GOx) coupled with Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b6fa3ab10980472666f4ad74cb04089
https://pubmed.ncbi.nlm.nih.gov/29902633
https://pubmed.ncbi.nlm.nih.gov/29902633
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Conference
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