Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Alexander J. Rommens"'
Autor:
Simon Kahmann, Herman Duim, Alexander J. Rommens, Kyle Frohna, Gert H. ten Brink, Giuseppe Portale, Samuel D. Stranks, Maria A. Loi
Publikováno v:
Journal of Materials Chemistry C, 10(46), 17539-17549. ROYAL SOC CHEMISTRY
Scarce information is available on the thin film morphology of Dion-Jacobson halide perovskites. However, the microstructure can have a profound impact on a material's photophysics and its potential for optoelectronic applications. The microscopic me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a585eda363ce28ea790d6455e9e212ba
https://www.repository.cam.ac.uk/handle/1810/343191
https://www.repository.cam.ac.uk/handle/1810/343191
Autor:
Simon Kahmann, Jingjin Dong, Shuyan Shao, Maria Antonietta Loi, Gert H. ten Brink, Alexander J. Rommens, Daniel Hermida-Merino, Giuseppe Portale
Publikováno v:
Advanced Functional Materials, 30(24):2001294. WILEY-V C H VERLAG GMBH
'Advanced Functional Materials ', vol: 30, pages: 2001294-1-2001294-11 (2020)
'Advanced Functional Materials ', vol: 30, pages: 2001294-1-2001294-11 (2020)
Knowledge of the mechanism of formation, orientation, and location of phases inside thin perovskite films is essential to optimize their optoelectronic properties. Among the most promising, low toxicity, lead-free perovskites, the tin-based ones are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94bcaced38aa4c780d97f491a50dfee5
https://research.rug.nl/en/publications/0e49220a-c46e-45ef-9074-be5962ae825b
https://research.rug.nl/en/publications/0e49220a-c46e-45ef-9074-be5962ae825b
Autor:
Matteo Pitaro, Giuseppe Portale, Simon Kahmann, Wytse Talsma, Jingjin Dong, Shuyan Shao, Alexander J. Rommens, Maria Antonietta Loi
Publikováno v:
Advanced Functional Materials, 31(11):2008478. WILEY-V C H VERLAG GMBH
To date, there are no reports of 3D tin perovskite being used as a semiconducting channel in field-effect transistors (FETs). This is probably due to the large amount of trap states and high p-doping typical of this material. Here, the first top-gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e491e1275338094c4a286f63be160b5f
https://doi.org/10.1002/adfm.202008478
https://doi.org/10.1002/adfm.202008478
Autor:
Shuyan Shao, Maria Antonietta Loi, Gert H. ten Brink, Jingjin Dong, Daniel Hermida-Merino, Alexander J. Rommens, Simon Kahmann, Giuseppe Portale
Publikováno v:
Advanced Functional Materials. 30:2070154
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ab870f4077d8bc7cde49a97c79e378
https://doi.org/10.1002/adfm.202070154
https://doi.org/10.1002/adfm.202070154