Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Alexander I. Ozerov"'
Autor:
K. S. Zemtsov, Vasily S. Anashin, R. G. Useinov, Maxim S. Gorbunov, A.E. Kozyukov, Alexander I. Ozerov, Gennady I. Zebrev, Vladimir V. Emeliyanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 775:41-45
Mean and partial cross-section concepts and their connections to multiplicity and statistics of multiple cell upsets (MCUs) in highly-scaled digital memories are introduced and discussed. The important role of the experimental determination of the up
Autor:
G. I. Zebrev, Boris V. Vasilegin, Vladimir V. Emeliyanov, Andrey A. Antonov, P. N. Osipenko, Alexander I. Chumakov, Alexander V. Klishin, Pavel S. Dolotov, Alexander I. Ozerov, Alexey L. Vasiliev, Andrey V. Yanenko, Maxim S. Gorbunov, Vasily S. Anashin
Publikováno v:
IEEE Transactions on Nuclear Science. 60:2762-2767
The design and experimental results are presented for the fault-tolerant 0.35 im SOI CMOS microprocessor. DICE-like cells are shown to be vulnerable to SEU during “read” and “write” modes.
Autor:
K. S. Zemtsov, Vladimir V. Emeliyanov, Alexander I. Ozerov, R. G. Useinov, Maxim S. Gorbunov, Gennady I. Zebrev
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets (MCU) in the nanoscale (with feature sizes less than 100 nm) memories. Microdosimetric model of the MCU cross- secti
Autor:
Timofey A. Maksimenko, Grigory A. Protopopov, Linaris R. Bakirov, Vasily S. Anashin, Pavel A. Chubunov, Aleksandr E. Koziukov, Alexander I. Ozerov
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
The paper presents test results of electronic components candidate for spacecraft obtained on low (3-6 MeV/nucleon) and high (20-40 MeV/nucleon) energy heavy ion test facilities. In addition to obtaining experimental data, the purpose of the study wa
Autor:
Alexander S. Bakerenkov, Vasily S. Anashin, Alexander E. Kozyukov, Alexander S. Vatuev, Vladimir V. Emeliyanov, Vladimir A. Skuratov, Vladimir V. Belyakov, Alexey V. Besetskiy, Alexander I. Ozerov
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
This paper presents SEE test facility as well as its opportunities of integrated microcircuit tests in the temperature range. The used method of heating and cooling of DUT was considered in vacuum chamber of test facility.
Autor:
Andrey V. Yanenko, Andrey A. Antonov, R. G. Useinov, P. N. Osipenko, Alexander I. Chumakov, Maxim S. Gorbunov, Vladimir V. Emeliyanov, Alexander A. Pechenkin, Vasily S. Anashin, Boris V. Vasilegin, Alexander I. Ozerov, G. I. Zebrev
Publikováno v:
2011 12th European Conference on Radiation and Its Effects on Components and Systems.
The results on SEE sensitivity of 0.5 $\mu$ m SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and $^{252}$ Cf fission source) is provided for the