Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Alexander I. Belogorokhov"'
Publikováno v:
Journal of Applied Physics. 84:657-659
Low-frequency infrared (IR) spectra of fullerene and metastable forms of C60 obtained at high pressures and temperatures have been investigated along with the spectra of natural diamond and graphite in the range from 8 to 170 cm−1. Several bands of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da16b6e761fccd540811c7cc2f5907f3
https://doi.org/10.1063/1.368069
https://doi.org/10.1063/1.368069
Publikováno v:
Applied Physics Letters. 72:516-518
This analysis is made of the spectral dependences of the position of the fundamental absorption edge, the photoconductivity, and the optical spectra of CdxHg1−xTe (0.35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69406ddd1f717549dc2d3be70baabce7
https://doi.org/10.1063/1.120806
https://doi.org/10.1063/1.120806
Autor:
Igor A. Tutorsky, Anatoly A. Ischenko, Victor G. Plotnichenko, V. V. Koltashev, Victor N. Bagratashvili, Kseniya V. Zaitseva, Alla A. Sviridova, Alexey Rybaltovsky, Alexander I. Belogorokhov
Publikováno v:
SPIE Proceedings.
The optical properties of emulsion nanocomposite materials based on powder silicon are studied. The method of creation of a new type of emulsion composite, allowing the control of the spectral structure of transmitted electromagnetic radiation is rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04878b46834ecb8f2613de7552a05f2a
https://doi.org/10.1117/12.695008
https://doi.org/10.1117/12.695008
Autor:
V. M. Maslovsky, V. A. Karavanskii, N. N. Mel’nik, V. I. Beclemishev, Alexander I. Belogorokhov, T. N. Zavaritskaja, G. Y. Pavlov
Publikováno v:
Scopus-Elsevier
The effect of arc plasma jet treatment (APJT) on the porous silicon (PS) structure, surface, and photoluminescence (PL) has been studied. The investigation of PS FTIR absorption spectra indicate that the Ar/air APJT induces the decreasing of the conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::145d3f78b015d4a170f7bae19ba0fd5d
https://doi.org/10.1117/12.232224
https://doi.org/10.1117/12.232224
Publikováno v:
SPIE Proceedings.
The role of silicon hydride species in the photoluminescence intensity behavior of porous silicon (PS) has been studied. The surface coverage was monitored using Fourier Transform Spectroscopy (FTIR). Porous silicon sample sets was prepared by the an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f7adedcd6a26571f9fac6c3889f11e2
https://doi.org/10.1117/12.190744
https://doi.org/10.1117/12.190744
Publikováno v:
SPIE Proceedings.
Moscow 117571INTRODUCTIONInGaAs epitaxial layers (EL) have a number of physical propertieswhich are very attracted for many practical application. Special placein this system takes isoperiodical heterocomposition In Ga4..As/InP,in order to receive EL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc04cfe3ebcfa8682b53aef4edb564bc
https://doi.org/10.1117/12.190786
https://doi.org/10.1117/12.190786
Publikováno v:
SPIE Proceedings.
Negative-beam (NB) FTIR measurements are made with no radiation source but with the sample and detector at different temperatures. They are a powerful tool in the study of thermo- stimulated effects in semiconductors without light excitation. They ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b03d583731d8b0b2b61d3fb4da72cf
https://doi.org/10.1117/12.166576
https://doi.org/10.1117/12.166576
Publikováno v:
International Journal of Nanoparticles. 3:65
Nanospheres containing a crystalline silicon core covered with thin silica shell were prepared by super high-frequency plasmochemical technique and studied in aqueous solutions by capillary zone electrophoresis (CZE). The nanospheres dispersed in pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705b11f56fd71a1ffb542bac4c3ad78d
https://doi.org/10.1504/ijnp.2010.033222
https://doi.org/10.1504/ijnp.2010.033222