Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Alexander Heinisch"'
Autor:
Peter Dorfinger, Ulrich Pache, Oliver Langthaler, Alexander Heinisch, Ferdinand von Tüllenburg, Armin Veichtlbauer
Publikováno v:
Electronics, Vol 9, Iss 1879, p 1879 (2020)
Electronics
Volume 9
Issue 11
Electronics
Volume 9
Issue 11
Due to changed power consumption patterns, technological advance and deregulation, the appearance of the power grid in the low and medium voltage segment has changed. The spread of heating and cooling with electrical energy and an increase of electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f88020079fe5ada484a63faf88582740
https://www.mdpi.com/2079-9292/9/11/1879
https://www.mdpi.com/2079-9292/9/11/1879
Autor:
Oliver Jung, Friederich Kupzog, Oliver Langthaler, Ulrich Pache, Alexander Heinisch, Peter Dorfinger, Armin Veichtlbauer, Ferdinand von Tüllenburg, Reinhard Frank
Publikováno v:
Electronics
Volume 9
Issue 9
Electronics, Vol 9, Iss 1433, p 1433 (2020)
Volume 9
Issue 9
Electronics, Vol 9, Iss 1433, p 1433 (2020)
Virtualisation is a concept successfully applied to IT systems. In this work, we analyse how virtualisation approaches, such as edge computing, brokerage and software-defined networking, can be applied in the area of electricity grid management and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::829fef95d37743c0e3a7029ea41f797f
Autor:
Oliver Supplie, Manali Nandy, Thomas Hannappel, Peter Kleinschmidt, Alexander Heinisch, Ammar Tummalieh, Masakazu Sugiyama, Agnieszka Paszuk
Epitaxial integration of direct-bandgap III–V compound semiconductors with silicon requires overcoming a significant lattice mismatch. To this end, GaAsP step-graded buffer layers are commonly applied. The thickness and composition of the individua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c28aa2d8768ba30a2b8b66bdda8f6f01
https://publica.fraunhofer.de/handle/publica/265926
https://publica.fraunhofer.de/handle/publica/265926
Autor:
Masakazu Sugiyama, Boram Kim, Sebastian Brückner, Agnieszka Paszuk, Manali Nandy, Peter Kleinschmidt, Alexander Heinisch, Yoshiaki Nakano, Thomas Hannappel, Oliver Supplie
Publikováno v:
Solar Energy Materials and Solar Cells. 180:343-349
Realization of high efficiency III-V-on-Si solar cells requires preparation of an oxygen free Si substrate surface, which allows for subsequent antiphase domain free III-V epitaxy. For GaAsP/Si tandem cells, the impact of As on established Si process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c871a95b0f1ee56effef9c26b305c47c
https://doi.org/10.1016/j.solmat.2017.07.032
https://doi.org/10.1016/j.solmat.2017.07.032
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
The established approach for integration of direct bandgap III/Vs on silicon utilizes GaAsP graded buffer layers. Here, we study graded GaAsP(001) growth in situ with reflection anisotropy spectroscopy (RAS). With increasing As supply, a characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9940b4f832d95f1160cb0c364dd70ee9
https://doi.org/10.1109/pvsc.2018.8547955
https://doi.org/10.1109/pvsc.2018.8547955