Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition

Autor: Michael P. Mueller, Katrin Pingen, Alexander Hardtdegen, Stephan Aussen, Andreas Kindsmueller, Susanne Hoffmann-Eifert, Roger A. De Souza

Publikováno v: APL Materials, Vol 8, Iss 8, Pp 081104-081104-8 (2020)

Though present in small amounts and migrating at low rates, intrinsic cation defects play a central role in governing the operational lifetime of oxide-ion conducting materials through slow degradation processes such as interdiffusion, kinetic demixi

Externí odkaz: https://doaj.org/article/c225809c20fd458c8a02b76ff6344ebb

Variability-Aware Modeling of Filamentary Oxide based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

Autor: Felix Cüppers, Susanne Hoffmann-Eifert, Christopher Bengel, Stephan Menzel, Anne Siemon, Lena Hellmich, Alexander Hardtdegen, Moritz von Witzleben, Rainer Waser

Publikováno v: IEEE transactions on circuits and systems / 1 67(12), 4618-4630 (2020). doi:10.1109/TCSI.2020.3018502
IEEE transactions on circuits and systems / 1 Regular papers 67(12), 4618-4630 (2020). doi:10.1109/TCSI.2020.3018502

IEEE transactions on circuits and systems / 1 67(12), 4618-4630 (2020). doi:10.1109/TCSI.2020.3018502
Published by Institute of Electrical and Electronics Engineers, New York, NY

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a62012fe68d9bfc20813f2af8a4f216
https://publications.rwth-aachen.de/record/808190

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications

Autor: Stephan Aussen, Olof Gutowski, Martin v. Zimmermann, Theodor Schneller, Lars Klemeyer, U. Boettger, Ann-Christin Dippel, Alexander Hardtdegen, Susanne Hoffmann-Eifert, Fenja Berg

Publikováno v: Nanoscale 12(24), 13103-13112 (2020). doi:10.1039/D0NR01847C

Functional thin films are commonly integrated in electronic devices as part of a multi-layer architecture. Metal/oxide/metal structures e.g. in resistive switching memory and piezoelectric microelectrochemical devices are relevant applications. The f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9778e643a2839594cfbbedb9daf66c91
https://juser.fz-juelich.de/record/878687

Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO x Bilayer ReRAM Cells

Autor: Felix Cüppers, Alexander Hardtdegen, Camilla La Torre, Rainer Waser, Susanne Hoffmann-Eifert, Stephan Menzel

Publikováno v: IEEE Transactions on Electron Devices. 65:3229-3236

Bipolar redox-based resistive random-access memory cells are intensively studied for new storage class memory and beyond von Neumann computing applications. However, the considerable variability of the resistance values in ON and OFF state as well as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9789c5b3f8de245013dd6392f021a52
https://doi.org/10.1109/ted.2018.2849872

Forming-free metal-oxide ReRAM by oxygen ion implantation process

Autor: Rainer Waser, Alexander Hardtdegen, Susanne Hoffmann-Eifert, Won-joo Kim, Dan Buca, Stephan Menzel, Vikas Rana, Dirk J. Wouters, Christian Rodenbücher

Publikováno v: 2016 IEEE International Electron Devices Meeting (IEDM).

We propose a new method for obtaining forming-free ReRAM devices by oxygen ion implantation (O 2 IIP) in the metal oxide film during the device fabrication process. By tuning the implantation dose, as-fabricated devices can be transformed into the ON

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::66aac8a15b3eba512c781206c7d36869
https://doi.org/10.1109/iedm.2016.7838345