Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Alexander G. Kuznetsov"'
Autor:
Denis I. Sotskov, Alexey V. Zubakov, Nikolay A. Usachev, Nikita M. Zhidkov, Alexander G. Kuznetsov, Alexander V. Ermakov, Alexander Y. Nikiforov
Publikováno v:
Безопасность информационных технологий, Vol 30, Iss 3, Pp 104-115 (2023)
Results of designing the specialized RF elements library intended for use in the CMOS 180 nm process are presented. The RF library includes a set of RF MOSFETs for amplifiers and switches design, three types of varactors based on the MOS-structure, s
Externí odkaz:
https://doaj.org/article/0fc8d0b0797c4733bf25b50c3505f943
Autor:
K. M. Amburkin, N. A. Usachev, Nikita M. Zhidkov, Igor O. Metelkin, D. I. Sotskov, Dmitry M. Amburkin, Dmitry V. Boychenko, Alexander G. Kuznetsov, V. V. Elesin, Varvara V. Elesina
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2396-2404
This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon–germanium (SiGe) and gallium arsenide (GaAs) heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d5b42db1462e1dff136e9d770ea5a4
https://doi.org/10.1109/tns.2020.3015560
https://doi.org/10.1109/tns.2020.3015560
Autor:
Alexander Y. Nikiforov, D. I. Sotskov, V. V. Elesin, N. A. Usachev, Alexander G. Kuznetsov, Nikita M. Zhidkov
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 33:317-326
Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 ?m D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be17d91bf36261c066cbe442166169e3
https://doi.org/10.2298/fuee2002317s
https://doi.org/10.2298/fuee2002317s
Autor:
Denis I. Sotskov, Alexander G. Kuznetsov, Vadim V. Elesin, Ilya A. Selishchev, Vladislav N. Kotov, Alexander Y. Nikiforov
Publikováno v:
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27126b410f06a0bfeadd7039ac82b47f
https://doi.org/10.1109/radecs53308.2021.9954481
https://doi.org/10.1109/radecs53308.2021.9954481
Autor:
D. I. Sotskov, G. V. Chukov, Alexander G. Kuznetsov, Alexander Y. Nikiforov, V. V. Elesin, N. A. Usachev
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies – CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe BiCMOS 0.42/0.25 µm process, GaAs heterojunction bipolar transistor (HBT) 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba71699b4f7b311235bd2dd3a1f8525
https://doi.org/10.1109/sibcon50419.2021.9438923
https://doi.org/10.1109/sibcon50419.2021.9438923
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
Radio frequency identification systems (RFID) are widely used for monitoring and localization of underground infrastructure objects: pipelines, power, and communication networks. Wireless underground sensor networks (WUSN) are the promising applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08e7f6de61b1488094a0f0211c2b074c
https://doi.org/10.1109/sibcon50419.2021.9438887
https://doi.org/10.1109/sibcon50419.2021.9438887
Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization
Publikováno v:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf0ead17b3af83dec90c3b17b87da4af
https://doi.org/10.1109/radecs47380.2019.9745656
https://doi.org/10.1109/radecs47380.2019.9745656
Publikováno v:
ITM Web of Conferences, Vol 30, p 10001 (2019)
The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work. The amplifier with an operating frequency range from 0.1 GHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::698a25d89241149af38750874e8fed33
https://doi.org/10.1051/itmconf/20193010001
https://doi.org/10.1051/itmconf/20193010001
Autor:
V. A. Telets, Alexander Y. Nikiforov, V. V. Elesin, Alexander G. Kuznetsov, G. N. Nazarova, G. V. Chukov, Dmitry V. Boychenko, K. M. Amburkin
Publikováno v:
2014 IEEE Radiation Effects Data Workshop (REDW).
A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ebe87c7220aac44a659d72c3e85d08
https://doi.org/10.1109/redw.2014.7004589
https://doi.org/10.1109/redw.2014.7004589
Publikováno v:
International Journal of Systems Science. 29:971-979
This paper proposes a multiple model predictive control scheme for the case where the scheduling variable is the output of the nonlinear plant. By means of model interpolation and successive predictions, the resulting nonlinear strategy makes use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2464f5a6b288ef39222f24aaa98b1318
https://doi.org/10.1080/00207729808929589
https://doi.org/10.1080/00207729808929589