Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Alexander Chaney"'
Autor:
Jacek Wasik, Joseph Sutcliffe, Renaud Podor, Jarrod Lewis, James Edward Darnbrough, Sophie Rennie, Syed Akbar Hussain, Christopher Bell, Daniel Alexander Chaney, Gareth Griffiths, Lottie Mae Harding, Florence Legg, Eleanor Lawrence Bright, Rebecca Nicholls, Yadukrishnan Sasikumar, Angus Siberry, Philip Smith, Ross Springell
Publikováno v:
npj Materials Degradation, Vol 8, Iss 1, Pp 1-6 (2024)
Abstract Although the principal physical behaviour of a material is inherently connected to its fundamental crystal structure, the behaviours observed in the real-world are often driven by the microstructure, which for many polycrystalline materials,
Externí odkaz:
https://doaj.org/article/5eef005979194a7ab882ea2e93514bbd
Autor:
Wencan Jin, Suresh Vishwanath, Jianpeng Liu, Lingyuan Kong, Rui Lou, Zhongwei Dai, Jerzy T. Sadowski, Xinyu Liu, Huai-Hsun Lien, Alexander Chaney, Yimo Han, Michael Cao, Junzhang Ma, Tian Qian, Shancai Wang, Malgorzata Dobrowolska, Jacek Furdyna, David A. Muller, Karsten Pohl, Hong Ding, Jerry I. Dadap, Huili Grace Xing, Richard M. Osgood, Jr.
Publikováno v:
Physical Review X, Vol 7, Iss 4, p 041020 (2017)
Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surfac
Externí odkaz:
https://doaj.org/article/36742af0f716440f9fbf69e95d9f5d16
Autor:
Henry Tyler Aller, Alexander Chaney, Thomas Pfeifer, Kent Averett, Thaddeus Asel, Patrick E Hopkins, Shin Mou, Samuel Graham
Publikováno v:
ECS Meeting Abstracts. :1246-1246
AlN/GaN digital alloys (i.e., short period superlattices) have the advantage of being an ultra-wide bandgap due to the quantum confinement effect, preservation of high mobility (no strong alloy scattering), and higher thermal conductivity than AlGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed4099f24d282217a6dc6c49686dcc33
https://doi.org/10.1149/ma2022-02341246mtgabs
https://doi.org/10.1149/ma2022-02341246mtgabs
Autor:
Alan Seabaugh, Sergei Rouvimov, Henryk Turski, Huili Grace Xing, Kazuki Nomoto, Jimy Encomendero, Tatyana Orlova, Debdeep Jena, Patrick Fay, Zongyang Hu, Alexander Chaney
Publikováno v:
Applied Physics Letters. 116:073502
This report showcases a vertical tunnel field effect transistor (TFET) fabricated from a GaN/InGaN heterostructure and compares it to a gated vertical GaN p-n diode. By including a thin InGaN layer, the interband tunneling in the TFET is increased co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81e0259b0521d50d038b9c5ab75f612
https://doi.org/10.1063/1.5132329
https://doi.org/10.1063/1.5132329
Autor:
Henryk Turski, Moon J. Kim, Debdeep Jena, Kazuki Nomoto, Zongyang Hu, Qingxiao Wang, Alexander Chaney, Huili Grace Xing
Publikováno v:
DRC
Tunnel field-effect transistors (TFETs) offer the means to surpass the subthreshold swing (SS) limit of 60 mV/dec that limits MOSFETs. While MOSFETs rely on modulating a potential barrier, which is subject to a Boltzmann tail in the density of states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::904a163a83a83641449b92c323742549
https://doi.org/10.1109/drc.2018.8442249
https://doi.org/10.1109/drc.2018.8442249
Autor:
S. M. Islam, Alexander Chaney, Vladimir Protasenko, Shyam Bharadwaj, Kazuki Nomoto, Huili Grace Xing, Debdeep Jena
Publikováno v:
Applied Physics Letters. 114:113501
Deep ultraviolet light-emitting diodes (LEDs) composed of III-Nitride semiconductors need layers of heavy doping (>1 × 1019 cm−3) to overcome large dopant activation energies and maintain high electrical conductivity. This work reports that at dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7afcb0bef656ff94bfd493a6574f0566
https://doi.org/10.1063/1.5086052
https://doi.org/10.1063/1.5086052
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
Tunnel Switch Diodes (TSDs) exhibit a S-shaped IV curve with negative differential resistance. Because of tunneling, they are able to switch between a low-current, high-resistance state (HRS) and a high-current, low-resistance state (LRS) fast, makin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2b5692f111326595cdd05a8b2690f5
https://doi.org/10.1109/drc.2016.7548409
https://doi.org/10.1109/drc.2016.7548409
Autor:
Rajib Rahman, S. M. Islam, Hesameddin Ilatikhameneh, Cory Lund, Alexander Chaney, Patrick Fay, Gerhard Klimeck, Fan Chen, Lina Cao, Y. Cho, Sarah L. Keller, Tarek A. Ameen, D. Digiovanni, Wei Li, Debdeep Jena
Publikováno v:
ResearcherID
Future generations of ultra-scaled logic may require alternative device technologies to transcend the limitations of Si CMOS; in particular, power dissipation constraints in aggressively-scaled, highly-integrated systems make device concepts capable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa281d53a7d56d35cb43b36eb75568a0
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000404176400014&KeyUID=WOS:000404176400014
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000404176400014&KeyUID=WOS:000404176400014
