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of 6
pro vyhledávání: '"Alexander Caut"'
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-7 (2024)
This paper demonstrates with FDTD simulations a silicon nitride polarization independent coarse wavelength division multiplexing (CWDM) receiver platform based on square waveguides for optical interconnects at 1 $\mu$m. Here, the channel spacing of t
Externí odkaz:
https://doaj.org/article/0d82021d3e5e415c910fa8e8f9d0e570
Autor:
Alexander Caut, Magnus Karlsson
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 2, Pp 1-7 (2024)
This article demonstrates with simulations two polarization independent wavelength division multiplexing receiver platforms based on thin silicon nitride waveguides for optical interconnects at 1 $\mu$m. The chosen waveguide base geometry (width = 90
Externí odkaz:
https://doaj.org/article/0c50f1f2963a4e6f9b8a577e340a2d42
Autor:
Mehdi Jahed, Alexander Caut, Jeroen Goyvaerts, Marc Rensing, Magnus Karlsson, Anders Larsson, Gunther Roelkens, Roel Baets, Peter O'Brien
Publikováno v:
Journal of Lightwave Technology. 40:5190-5200
An investigation of angled flip-chip integration of a singlemode 850 nm vertical-cavity surface-emitting laser (VCSEL) on a silicon nitride photonic integrated circuit (PIC) is presented. Using numerical FDTD simulations, we consider the conditions u
Autor:
Hezhi Zhang, Ching-Wen Shih, Denis Martin, Alexander Caut, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Publikováno v:
Semiconductor Science & Technology; Aug2019, Vol. 34 Issue 8, p1-1, 1p
Autor:
Raphaël Butté, Ching-Wen Shih, Alexander Caut, Hezhi Zhang, Nicolas Grandjean, Jean-François Carlin, Denis Martin
We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) output power and gain bandwidth on cavity length were investigated in device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91d14545b23c742d31a26f8b08e80bf1
https://infoscience.epfl.ch/record/273492
https://infoscience.epfl.ch/record/273492
Autor:
Denis Martin, Jean-François Carlin, Hezhi Zhang, Raphaël Butté, Alexander Caut, Nicolas Grandjean, Ching-Wen Shih
Publikováno v:
Semiconductor Science and Technology
We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 μm. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed B