Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Alexander Breymesser"'
Publikováno v:
Applied Physics Letters. 121:062107
We present characterization results of integrated vacuum gaps in semiconductors and report the highest breakdown field of dielectric layers ever recorded within microfabricated semiconductor devices. Difficulties associated with the characterization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedf830857edc583deb77cc2b36792e8
https://doi.org/10.1063/5.0097043
https://doi.org/10.1063/5.0097043
Autor:
Alexander Breymesser, Naveen Ganagona, Andreas Schulz, Alexander Susiti, Andre Schwagmann, Werner Schustereder, Franz Josef Niedernostheide, H.-J. Schulze, T. Kurz, T. Wübben, M. Stadtmuller, Moriz Jelinek, Stephan Voss, Johannes Georg Laven, Hans-Peter Felsl, Helmut Öfner, Florian Lükermann
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
As in other semiconductor industries, there is a strong trend to use larger wafer diameters for the fabrication of power devices. However, for wafer diameters above 200 mm float-zone (FZ) silicon which is traditionally used for IGBTs is not available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd16773e8063412a36e14e2c4ce0467
https://doi.org/10.1109/ispsd.2016.7520851
https://doi.org/10.1109/ispsd.2016.7520851
Autor:
Michael Stöger, Viktor Schlosser, M. Nelhiebel, Alexander Breymesser, Peter Schattschneider, Bernard Jouffrey
Publikováno v:
Solar Energy Materials and Solar Cells. 63:177-184
The aim of this work is the quantitative chemical analysis of polycrystalline silicon thin "lms grown on glass substrates at temperatures (6003C by means of transmission electron microscopy (TEM) and electron energy-loss spectrometry (EELS). Specimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac825f2dcaeab579fdeb013f6ba81bf3
https://doi.org/10.1016/s0927-0248(99)00172-5
https://doi.org/10.1016/s0927-0248(99)00172-5