Zobrazeno 1 - 10
of 299
pro vyhledávání: '"Alexander A, Demkov"'
Autor:
Adam Dodson, Hongrui Wu, Anuruddh Rai, Sohm Apte, Andrew O’Hara, Benjamin Lawrie, Yongqiang Wang, Akira Ueda, Halina Krzyżanowska, Michael Titze, Jimmy Davidson, Anthony Hmelo, Agham B. Posadas, Alexander A. Demkov, Sokrates T. Pantelides, Leonard C. Feldman, Norman H. Tolk
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-9 (2024)
Abstract Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding often emerges from studies of th
Externí odkaz:
https://doaj.org/article/ed75df29ff45480a889ab8e6d7efa934
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 10, Pp n/a-n/a (2021)
Strontium barium niobate (Sr x Ba1–x Nb2O6, referred to as SBN) is a material of interest for making efficient optical modulators due to its very high electro‐optic (EO or Pockels) coefficient. SBN is a ferroelectric with a Curie temperature that
Externí odkaz:
https://doaj.org/article/19e4517a5f3f4831b036162c4aa50314
Autor:
Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Alexander A. Demkov
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045209-045209-10 (2021)
β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface. The β-Ga2O3 film was 66 nm thick, stoich
Externí odkaz:
https://doaj.org/article/4d697671512d4137943f18e3fc5714d3
Autor:
Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by
Externí odkaz:
https://doaj.org/article/2d115af51862416889643806af10ea45
Autor:
Wei Guo, Agham Posadas, Vadivukkarasi Jeyaselvan, Wei Cao, Ilya Beskin, Marc Reynaud, Jamie D. Reynolds, Jamie H. Warner, Hyo Ju Park, Alexander A. Demkov, Goran Z. Mashanovich
Publikováno v:
ACS Applied Materials & Interfaces. 13:51230-51244
Thick epitaxial BaTiO3 films ranging from 120 nm to 1 μm were grown by off-axis RF magnetron sputtering on SrTiO3-templated silicon-on-insulator (SOI) substrates for use in electro-optic applications, where such large thicknesses are necessary. The
Autor:
Marc Reynaud, Zuoming Dong, Hyoju Park, Wente Li, Agham B. Posadas, Jamie H. Warner, Daniel Wasserman, Alexander A. Demkov
Publikováno v:
Physical Review Materials. 6
Autor:
Agham Posadas, Albina Y. Borisevich, J. Elliott Ortmann, Moon J. Kim, Alexander A. Demkov, Sunah Kwon
Publikováno v:
ACS Applied Nano Materials. 4:2153-2159
Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is in...
Publikováno v:
npj Computational Materials, Vol 6, Iss 1, Pp 1-9 (2020)
The explosive rise of silicon photonics has led to renewed interest in the electro-optic (EO) or Pockels effect due to its potential uses in many next generation device applications. To find materials with a strong EO response in thin film form, whic
Autor:
Alexander A. Demkov, Moon J. Kim, John G. Ekerdt, Bryce I. Edmondson, John E. Ortmann, Sunah Kwon
Publikováno v:
Journal of the American Ceramic Society. 103:5700-5705
Publikováno v:
Physical Review B. 104